CN221805513U - High-power device - Google Patents

High-power device Download PDF

Info

Publication number
CN221805513U
CN221805513U CN202420335649.8U CN202420335649U CN221805513U CN 221805513 U CN221805513 U CN 221805513U CN 202420335649 U CN202420335649 U CN 202420335649U CN 221805513 U CN221805513 U CN 221805513U
Authority
CN
China
Prior art keywords
heat dissipation
power device
slide
embedded
packaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202420335649.8U
Other languages
Chinese (zh)
Inventor
张海龙
孙家兴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chizhou Yunsama Semiconductor Materials Co ltd
Original Assignee
Chizhou Yunsama Semiconductor Materials Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chizhou Yunsama Semiconductor Materials Co ltd filed Critical Chizhou Yunsama Semiconductor Materials Co ltd
Priority to CN202420335649.8U priority Critical patent/CN221805513U/en
Application granted granted Critical
Publication of CN221805513U publication Critical patent/CN221805513U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本实用新型提供一种大功率器件,应用在大功率器件散热技术领域,其技术方案要点是:包括封装体,嵌设在封装体一面的散热载片;嵌设在封装体另一面的散热片,散热片与散热载片相对设置;设置在散热载片上的芯片结构,芯片结构位于散热载片和散热片之间;具有的技术效果是:通过二次封装,由原来的单面散热改为双面散热,大大的改善了散热的效率,从而提高了功率器件的使用寿命,提高功率器件的可靠性。

The utility model provides a high-power device, which is applied in the field of heat dissipation technology of high-power devices. The main points of the technical solution are: comprising a packaging body, a heat dissipation carrier embedded in one side of the packaging body; a heat sink embedded in the other side of the packaging body, the heat sink and the heat sink carrier being arranged opposite to each other; a chip structure arranged on the heat sink carrier, the chip structure being located between the heat sink carrier and the heat sink; the technical effect is: through secondary packaging, the original single-sided heat dissipation is changed to double-sided heat dissipation, which greatly improves the heat dissipation efficiency, thereby increasing the service life of the power device and improving the reliability of the power device.

Description

High-power device
Technical Field
The utility model relates to the technical field of heat dissipation of high-power devices, in particular to a high-power device.
Background
Packaging is mainly completed in the subsequent engineering of semiconductor manufacture; the method comprises the steps of arranging, fixing and connecting the semiconductor components and other components on a frame or a substrate by using a film technology and a micro-connection technology, leading out wiring terminals, and embedding and fixing the wiring terminals through a plastic insulating medium to form an integral main body structure;
At present, the high-power devices are mostly packaged in a semi-packaging mode, however, the high-power devices generate more heat during working, and the packaging mode only radiates heat on one side, so that the high-power devices are low in radiating speed and easy to age at high temperature, and the service life of the high-power devices is influenced.
Disclosure of utility model
The utility model aims to provide a high-power device, which has the advantages of greatly improving the heat dissipation efficiency of the high-power device, prolonging the service life of the high-power device and improving the reliability of the high-power device.
To achieve the above and other related objects, the present utility model provides the following technical solutions:
A high-power device comprises a package body,
A heat dissipation carrier embedded on one surface of the package body;
the radiating fin is embedded into the other surface of the packaging body, and the radiating fin and the radiating slide are arranged oppositely;
and the chip structure is arranged on the heat dissipation slide and is positioned between the heat dissipation slide and the heat dissipation fin.
Through the technical scheme, the heat dissipation slide plays a role in heat dissipation when bearing the chip structure, and double-sided heat dissipation is realized through the heat dissipation slide and the heat dissipation fins, so that the heat dissipation efficiency is greatly improved, and the service life of the power device is prolonged.
In an embodiment of the utility model, the heat dissipation carrier is embedded with a plurality of packaging columns, and the heat dissipation sheet is adhered to the tops of the plurality of packaging columns.
Through the technical scheme, the packaging column body is used for supporting the radiating fin, so that the radiating fin and the radiating slide are arranged oppositely, double-sided radiation is realized, and the radiating efficiency is improved.
In an embodiment of the utility model, the package body includes a filling portion filled between the heat sink and the heat sink, and a wrapping portion wrapping the package body and the heat sink.
Through the technical scheme, the sealing and protecting functions of the chip are achieved.
In an embodiment of the utility model, the heat dissipation carrier is embedded at the bottom of the package, and the heat dissipation fin is embedded at the top of the package;
the bottom of the heat dissipation slide is level with the bottom of the wrapping part;
The top of the radiating fin is flush with the top of the wrapping part.
Through above-mentioned technical scheme, the wholeness is strong and quickens the radiating efficiency of chip.
In an embodiment of the utility model, a connecting groove connected with the packaging column body is arranged at the upper part of the heat dissipation slide;
the lateral part of the heat dissipation slide glass is provided with a bonding groove connected with the wrapping part.
Through the technical scheme, the connecting groove is used for enhancing the connection strength of the heat dissipation slide and the packaging column body; the bonding groove is used for enhancing the connection strength of the heat dissipation slide and the wrapping part.
In an embodiment of the utility model, the bonding groove is a dovetail groove.
Through the technical scheme, the dovetail groove is used for increasing the binding force between the packaging body and the heat dissipation carrier plate, so that the packaging body and the heat dissipation carrier plate are connected more firmly.
In an embodiment of the utility model, the chip structure includes a chip fixed on a heat dissipation carrier, a metal wire with one end connected with the chip, and a lead frame connected with the other end of the metal wire;
The chip and the metal wires are wrapped in the packaging body, and the lead frame is partially embedded in the wrapping part.
Through the technical scheme, the chip is connected with the metal wire, the metal wire is connected with the lead frame, and the electric connection between the lead-out end of the internal circuit of the chip and the outer lead is realized, so that an electric loop is formed.
In an embodiment of the utility model, the heat sink is a ceramic plate.
Through the technical scheme, the ceramic plate has excellent heat conduction performance, and can meet the heat dissipation requirement of a high-power device.
As described above, the high-power device has the following beneficial effects:
Through the secondary packaging, original single-sided heat dissipation is changed into double-sided heat dissipation, and the heat dissipation efficiency is greatly improved, so that the service life of the power device is prolonged, and the reliability of the power device is improved.
Drawings
FIG. 1 is a cross-sectional view of the overall structure of an embodiment of the present utility model;
fig. 2 is a top view of the overall structure of an embodiment of the present utility model.
Reference numerals: 1. a package; 101. a filling part; 102. a wrapping portion; 4. a heat-dissipating slide; 5. a heat sink; 6. a chip structure; 7. packaging the column body; 8. a connecting groove; 9. a bonding groove; 61. a chip; 62. a wire; 63. a lead frame; 13. and a mounting groove.
Detailed Description
Further advantages and effects of the present utility model will become apparent to those skilled in the art from the disclosure of the present utility model, which is described by the following specific examples.
Please refer to fig. 1-2. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the utility model to the extent that it can be practiced, since modifications, changes in the proportions, or otherwise, used in the practice of the utility model, are not intended to be critical to the essential characteristics of the utility model, but are intended to fall within the spirit and scope of the utility model. Also, the terms such as "upper," "lower," "left," "right," "middle," and "a" and the like recited in the present specification are merely for descriptive purposes and are not intended to limit the scope of the utility model, but are intended to provide relative positional changes or modifications without materially altering the technical context in which the utility model may be practiced.
Referring to fig. 1 and 2, the present utility model provides a high-power device, which includes a heat dissipation carrier 4, a chip structure 6 and a heat sink 5;
The radiating fins 5 are arranged opposite to the radiating slide 4; the chip structure 6 is positioned between the heat dissipation slide 4 and the heat dissipation sheet 5; the heat dissipation slide 4 is of a rectangular structure, connecting grooves 8 are respectively formed in the upper part of the heat dissipation slide 4 near four right-angle positions, packaging columns 7 are respectively embedded in the four connecting grooves 8 through primary packaging, and mounting grooves 13 are respectively formed in the tops of the four packaging main bodies; the radiating fin 5 is of a rectangular structure, four right angles of the radiating fin 5 are respectively positioned in the four mounting grooves 13, and the radiating fin 5 is adhered to the packaging column 7; the heat dissipation plate 5 in the embodiment is a ceramic plate, and the ceramic plate has excellent heat conduction performance and can meet the heat dissipation requirement of a high-power device.
Referring to fig. 1 and 2, a package body 1 is formed by a second package; the package 1 includes a filling portion 101 filled between the heat sink 5 and the heat sink 4, and a wrapping portion 102 wrapping the package cylinder 7 and the wrapping portion of the heat sink 4 and the heat sink 5; the heat dissipation slide 4 is embedded at the bottom of the package body 1, and the heat dissipation fin 5 is embedded at the top of the package body 1; the bottom of the heat dissipation slide 4 is flush with the bottom of the wrapping part 102, and the top of the heat dissipation fin 5 is flush with the top of the wrapping part 102; the two side parts of the heat dissipation slide 4 are provided with bonding grooves 9, and the bonding grooves 9 are used for enhancing the connection strength of the heat dissipation slide 4 and the wrapping part 102; the bonding groove 9 in this embodiment may be a dovetail groove, where the dovetail groove is used to increase the bonding force between the package 1 and the heat dissipation carrier, so that the connection between the package 1 and the heat dissipation carrier is more firm.
Referring to fig. 1 and 2, the chip structure 6 includes a chip 61, a plurality of wires 62 and a plurality of lead frames 63, and the chip 61 is adhered to the upper portion of the heat dissipation carrier 4; a plurality of metal wires 62 are respectively welded at positions close to two sides of the upper part of the chip 61, and a plurality of lead frames 63 are respectively welded at the other ends of the metal wires 62; wherein the chip 61 and the wire 62 are both wrapped in the package 1, the lead frame 63 is partially wrapped in the wrapping portion 102, and the other portion is exposed outside the wrapping portion 102.
The use process is briefly described: the heat dissipation carrier 4 is arranged on a first forming die, molten plastic insulating medium is filled in the first forming die, and the molten plastic insulating medium is cooled and formed to form a packaging column 7 embedded on the heat dissipation carrier 4; the chip structure 6 is stuck on the heat dissipation slide 4, and then the heat dissipation sheet 5 is stuck on the top of the packaging column 7; however, the whole plastic insulating medium is arranged in a second forming die, molten plastic insulating medium is filled in the second forming die, and the molten plastic insulating medium is cooled and formed to form the high-power device with good heat dissipation function.
In summary, the utility model changes the original single-sided heat dissipation into double-sided heat dissipation through the secondary packaging, thereby greatly improving the heat dissipation efficiency, prolonging the service life of the power device and improving the reliability of the power device. Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present utility model and its effectiveness, and are not intended to limit the utility model. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the utility model. Accordingly, it is intended that all equivalent modifications and variations of the utility model be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (8)

1. A high power device, characterized by: comprises a packaging body (1),
A heat dissipation carrier sheet (4) embedded on one surface of the packaging body (1);
A radiating fin (5) embedded on the other surface of the packaging body (1), wherein the radiating fin (5) is arranged opposite to the radiating slide (4);
And the chip structure (6) is arranged on the heat dissipation slide (4), and the chip structure (6) is positioned between the heat dissipation slide (4) and the heat dissipation sheet (5).
2. A high power device according to claim 1, wherein: the heat dissipation slide (4) is embedded with a plurality of encapsulation columns (7), and the heat dissipation sheet (5) is adhered to the tops of the encapsulation columns (7).
3. A high power device according to claim 2, wherein: the package body (1) comprises a filling part (101) filled between the radiating fin (5) and the radiating slide (4) and a wrapping part (102) wrapping the packaging column (7) and the part of the radiating slide (4) and the radiating fin (5).
4. A high power device according to claim 3, wherein: the heat dissipation slide (4) is embedded at the bottom of the packaging body (1), and the heat dissipation sheet (5) is embedded at the top of the packaging body (1);
the bottom of the heat dissipation slide glass (4) is flush with the bottom of the wrapping part (102);
the top of the radiating fin (5) is flush with the top of the wrapping part (102).
5. A high power device according to claim 3, wherein: a connecting groove (8) connected with the packaging column body (7) is formed in the upper part of the heat dissipation slide glass (4);
The side part of the heat dissipation slide glass (4) is provided with a bonding groove (9) connected with the wrapping part (102).
6. The high power device of claim 5, wherein: the bonding groove (9) is a dovetail groove.
7. A high power device according to claim 3, wherein: the chip structure (6) comprises a chip (61) fixed on the heat dissipation slide glass (4), a metal wire (62) with one end connected with the chip (61) and a lead frame (63) connected with the other end of the metal wire (62);
The chip (61) and the metal wire (62) are both wrapped in the package body (1), and the lead frame (63) is partially embedded in the wrapping part (102).
8. A high power device according to claim 1, wherein: the radiating fin (5) is a ceramic plate.
CN202420335649.8U 2024-02-22 2024-02-22 High-power device Active CN221805513U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202420335649.8U CN221805513U (en) 2024-02-22 2024-02-22 High-power device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202420335649.8U CN221805513U (en) 2024-02-22 2024-02-22 High-power device

Publications (1)

Publication Number Publication Date
CN221805513U true CN221805513U (en) 2024-10-01

Family

ID=92889448

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202420335649.8U Active CN221805513U (en) 2024-02-22 2024-02-22 High-power device

Country Status (1)

Country Link
CN (1) CN221805513U (en)

Similar Documents

Publication Publication Date Title
US11139278B2 (en) Low parasitic inductance power module and double-faced heat-dissipation low parasitic inductance power module
KR101208332B1 (en) Clip structure for semiconductor package and a semiconductor package using the same
CN105161477B (en) A flat power module
CN218730911U (en) Double-sided heat dissipation packaging structure with internal insulation
CN113707624A (en) Gallium nitride power device and packaging method thereof
CN104766843B (en) A kind of high power semiconductor encapsulating structure mounted with SMT techniques
CN203983160U (en) A kind of solid-state relay with Rapid Thermal dissipation
CN216054669U (en) Gallium nitride power device convenient to heat dissipation
TW201916279A (en) Chip package
CN111341741A (en) A power device packaging structure and packaging method for improving heat dissipation capability
CN221805513U (en) High-power device
TWI447974B (en) LED package structure
CN210467819U (en) Chip packaging part
CN116544197A (en) Power device packaging structure and packaging method
CN104867897A (en) Diode power module
CN206210775U (en) High-heat conductivity and large-power bridge rectifier configuration
CN113675093B (en) A packaging design and preparation method of a double-sided plastic-sealed heat dissipation structure
CN215069926U (en) 2010-5 packaging diversified electrostatic tube
CN117690887A (en) A double-sided heat dissipation gallium oxide chip flip-chip packaging structure and its preparation method
CN201307589Y (en) Ball Grid Array Package Structure with Multiple Parallel Slots
CN212230427U (en) Fixed point cooling SiC mixed power module
CN210129504U (en) Smart Power Modules and Air Conditioners
CN209896055U (en) A QFN package structure of a multi-base island lead frame and a power conversion module
CN218827096U (en) Packaging structure
CN114709203A (en) Single-phase full-bridge intelligent power module based on gallium nitride power chip

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of utility model: A high-power device

Granted publication date: 20241001

Pledgee: Agricultural Bank of China Limited by Share Ltd. Chizhou branch

Pledgor: Chizhou Yunsama Semiconductor Materials Co.,Ltd.

Registration number: Y2025980009894

PE01 Entry into force of the registration of the contract for pledge of patent right