JPS5561024A - Method of manufacturing electric contact of semiconductor element - Google Patents

Method of manufacturing electric contact of semiconductor element

Info

Publication number
JPS5561024A
JPS5561024A JP13882979A JP13882979A JPS5561024A JP S5561024 A JPS5561024 A JP S5561024A JP 13882979 A JP13882979 A JP 13882979A JP 13882979 A JP13882979 A JP 13882979A JP S5561024 A JPS5561024 A JP S5561024A
Authority
JP
Japan
Prior art keywords
semiconductor element
electric contact
metallic layer
manufacturing electric
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13882979A
Other languages
English (en)
Inventor
Fuon Arumen Maruchin
Buitomaa Maruku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri France SA
Original Assignee
BBC Brown Boveri France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri France SA filed Critical BBC Brown Boveri France SA
Publication of JPS5561024A publication Critical patent/JPS5561024A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/035—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
    • H01L2224/03505—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H01L2224/8084—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83193—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/83224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0106—Neodymium [Nd]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/019—Contacts of silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Die Bonding (AREA)
JP13882979A 1978-10-31 1979-10-29 Method of manufacturing electric contact of semiconductor element Pending JPS5561024A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1119578A CH645208A5 (de) 1978-10-31 1978-10-31 Verfahren zur herstellung von elektrischen kontakten an halbleiterbauelementen.

Publications (1)

Publication Number Publication Date
JPS5561024A true JPS5561024A (en) 1980-05-08

Family

ID=4371004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13882979A Pending JPS5561024A (en) 1978-10-31 1979-10-29 Method of manufacturing electric contact of semiconductor element

Country Status (4)

Country Link
US (1) US4281236A (ja)
JP (1) JPS5561024A (ja)
CH (1) CH645208A5 (ja)
DE (1) DE2849716A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5646583A (en) * 1979-09-21 1981-04-27 Denki Onkyo Co Ltd Semiconductor device and manufacture thereof
JPS5895824A (ja) * 1981-12-02 1983-06-07 Fujitsu Ltd 半導体装置の製造方法
JPS6236846A (ja) * 1985-06-24 1987-02-17 アメリカ合衆国 金属層の平坦化方法

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3005662C2 (de) * 1980-02-15 1983-10-27 G. Rau GmbH & Co, 7530 Pforzheim Verfahren zur Herstellung eines Kontaktelementes
US4467312A (en) * 1980-12-23 1984-08-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor resistor device
JPS57106006A (en) * 1980-12-23 1982-07-01 Tokyo Shibaura Electric Co Method of forming resistor
DE3137441A1 (de) * 1981-09-21 1983-03-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zum befestigen von optischen und elektrooptischen bauelementen
GB2114809B (en) * 1982-02-04 1986-02-05 Standard Telephones Cables Ltd Metallic silicide production
DE3310362A1 (de) * 1983-03-22 1984-10-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zur veraenderung der optischen eigenschaft der grenzflaeche zwischen halbleitermaterial und metallkontakt
US4684781A (en) * 1985-01-29 1987-08-04 Physical Sciences, Inc. Method for bonding using laser induced heat and pressure
DE3517132A1 (de) * 1985-05-11 1986-11-13 Jürgen 6074 Rödermark Wisotzki Halbleiterelement mit einem elektrisch leitend mit ihm verbundenen mikroelement sowie verfahren zur herstellung der verbindung
GB8620057D0 (en) * 1986-08-18 1986-10-01 Philips Nv Cathode ray tube display device
JPH0732958B2 (ja) * 1989-07-14 1995-04-12 株式会社東芝 レーザ加工方法
JP2813507B2 (ja) * 1992-04-23 1998-10-22 三菱電機株式会社 ボンディング方法およびボンディング装置
US5498850A (en) * 1992-09-11 1996-03-12 Philip Morris Incorporated Semiconductor electrical heater and method for making same
US5276303A (en) * 1992-10-01 1994-01-04 At&T Bell Laboratories Laser bonding scheme
DE4316175A1 (de) * 1993-05-14 1994-11-17 Daimler Benz Ag Lötverbindung und Lötverfahren
JPH0737911A (ja) * 1993-07-19 1995-02-07 Mitsubishi Electric Corp 半導体素子のダイボンド装置、及びダイボンド方法
DE19912443C2 (de) * 1999-03-19 2003-05-28 Trw Automotive Electron & Comp eine elektrische Baueinheit mit wenigstens einem Leistungshalbleiterbauelement
DE10149140A1 (de) 2001-10-05 2003-04-17 Bosch Gmbh Robert Verfahren zur Verbindung einer Siliziumplatte mit einer weiteren Platte
EP1640108B1 (de) * 2004-09-23 2007-05-23 Hugo Kern und Liebers GmbH & Co. KG Platinen-und Federnfabrik Kontaktherstellungsverfahren
DE102006040352B3 (de) * 2006-08-29 2007-10-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Aufbringen von elektrischen Kontakten auf halbleitende Substrate, halbleitendes Substrat und Verwendung des Verfahrens
FR2915622B1 (fr) * 2007-04-30 2009-07-31 Valeo Electronique Sys Liaison Procde d'assemblage d'un organe sur un support par frittage d'une masse de poudre conductrice
US8362617B2 (en) 2008-05-01 2013-01-29 Infineon Technologies Ag Semiconductor device
TWI613177B (zh) * 2011-11-16 2018-02-01 製陶技術股份有限公司 製造一基材的方法
DE102017219435A1 (de) * 2017-10-30 2019-05-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Beschichtung einer metallischen Oberfläche mit einem metallischen Material

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146559A (en) * 1976-05-31 1977-12-06 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1057687A (en) * 1964-12-11 1967-02-08 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices
US3402460A (en) * 1965-05-26 1968-09-24 Westinghouse Electric Corp Attachment of leads to semiconductors
US3614832A (en) * 1966-03-09 1971-10-26 Ibm Decal connectors and methods of forming decal connections to solid state devices
US3586816A (en) * 1968-07-25 1971-06-22 American Optical Corp Spot welding system and method
US3934073A (en) * 1973-09-05 1976-01-20 F Ardezzone Miniature circuit connection and packaging techniques
DE2705444A1 (de) * 1977-02-09 1978-08-10 Siemens Ag Verfahren zur lokal begrenzten erwaermung eines festkoerpers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146559A (en) * 1976-05-31 1977-12-06 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5646583A (en) * 1979-09-21 1981-04-27 Denki Onkyo Co Ltd Semiconductor device and manufacture thereof
JPH0230596B2 (ja) * 1979-09-21 1990-07-06 Murata Manufacturing Co
JPS5895824A (ja) * 1981-12-02 1983-06-07 Fujitsu Ltd 半導体装置の製造方法
JPS6236846A (ja) * 1985-06-24 1987-02-17 アメリカ合衆国 金属層の平坦化方法

Also Published As

Publication number Publication date
CH645208A5 (de) 1984-09-14
US4281236A (en) 1981-07-28
DE2849716A1 (de) 1980-05-14

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