JPS5556663A - Insulating-gate type field-effect transistor - Google Patents

Insulating-gate type field-effect transistor

Info

Publication number
JPS5556663A
JPS5556663A JP13020878A JP13020878A JPS5556663A JP S5556663 A JPS5556663 A JP S5556663A JP 13020878 A JP13020878 A JP 13020878A JP 13020878 A JP13020878 A JP 13020878A JP S5556663 A JPS5556663 A JP S5556663A
Authority
JP
Japan
Prior art keywords
layer
gate
sio
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13020878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6237818B2 (enrdf_load_stackoverflow
Inventor
Minoru Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13020878A priority Critical patent/JPS5556663A/ja
Publication of JPS5556663A publication Critical patent/JPS5556663A/ja
Publication of JPS6237818B2 publication Critical patent/JPS6237818B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP13020878A 1978-10-23 1978-10-23 Insulating-gate type field-effect transistor Granted JPS5556663A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13020878A JPS5556663A (en) 1978-10-23 1978-10-23 Insulating-gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13020878A JPS5556663A (en) 1978-10-23 1978-10-23 Insulating-gate type field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5556663A true JPS5556663A (en) 1980-04-25
JPS6237818B2 JPS6237818B2 (enrdf_load_stackoverflow) 1987-08-14

Family

ID=15028668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13020878A Granted JPS5556663A (en) 1978-10-23 1978-10-23 Insulating-gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5556663A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042869A (ja) * 1983-06-27 1985-03-07 アルカテル・エヌ・ブイ 半導体装置の製造方法
JPS62217666A (ja) * 1986-03-18 1987-09-25 Nippon Denso Co Ltd Ｍｉｓトランジスタ
JPH022666A (ja) * 1987-12-23 1990-01-08 Texas Instr Inc <Ti> 分離能力を高めたｍｏｓトランジスタ
US5291050A (en) * 1990-10-31 1994-03-01 Fuji Electric Co., Ltd. MOS device having reduced gate-to-drain capacitance
US5760441A (en) * 1995-05-16 1998-06-02 Nippon Steel Semiconductor Corporation Metal oxide semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042869A (ja) * 1983-06-27 1985-03-07 アルカテル・エヌ・ブイ 半導体装置の製造方法
JPS62217666A (ja) * 1986-03-18 1987-09-25 Nippon Denso Co Ltd Ｍｉｓトランジスタ
JPH022666A (ja) * 1987-12-23 1990-01-08 Texas Instr Inc <Ti> 分離能力を高めたｍｏｓトランジスタ
US5291050A (en) * 1990-10-31 1994-03-01 Fuji Electric Co., Ltd. MOS device having reduced gate-to-drain capacitance
US5760441A (en) * 1995-05-16 1998-06-02 Nippon Steel Semiconductor Corporation Metal oxide semiconductor device
US6153911A (en) * 1995-05-16 2000-11-28 Nippon Steel Semiconductor Corp. Metal oxide semiconductor device and method manufacturing the same

Also Published As

Publication number Publication date
JPS6237818B2 (enrdf_load_stackoverflow) 1987-08-14

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