JPS5556662A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5556662A JPS5556662A JP12853978A JP12853978A JPS5556662A JP S5556662 A JPS5556662 A JP S5556662A JP 12853978 A JP12853978 A JP 12853978A JP 12853978 A JP12853978 A JP 12853978A JP S5556662 A JPS5556662 A JP S5556662A
- Authority
- JP
- Japan
- Prior art keywords
- constitution
- channel region
- share
- layers
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To accomplish high-density integration by the constitution wherein three FET's share only one channel region commonly.
CONSTITUTION: An n+-layer 23 which is independent of n+-layers 21 and 22 is provided so that they become the source or drain of a FET around a channel region 60 in an Si-substrate surface covered with a gate-oxide film, and a conductive film 53 is provided in the same way as conductive films 51 and 52 are provided on the layers 21 and 22. In this constitution, an active element, wherein three NOSFET's (TR12,13,23) share only one channel region commonly, can be obtained, thereby the occupying area on the substrate is greatly reduced, and high-density integration can be accomplished.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12853978A JPS5556662A (en) | 1978-10-20 | 1978-10-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12853978A JPS5556662A (en) | 1978-10-20 | 1978-10-20 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5556662A true JPS5556662A (en) | 1980-04-25 |
Family
ID=14987248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12853978A Pending JPS5556662A (en) | 1978-10-20 | 1978-10-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5556662A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4667217A (en) * | 1985-04-19 | 1987-05-19 | Ncr Corporation | Two bit vertically/horizontally integrated memory cell |
-
1978
- 1978-10-20 JP JP12853978A patent/JPS5556662A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4667217A (en) * | 1985-04-19 | 1987-05-19 | Ncr Corporation | Two bit vertically/horizontally integrated memory cell |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52102690A (en) | Semiconductor capacitance device | |
JPS5727070A (en) | Mos type semiconductor device | |
JPS559417A (en) | Semiconductor integrated circuit | |
JPS5556662A (en) | Semiconductor device | |
JPS5572069A (en) | Semiconductor device | |
JPS5381087A (en) | Gallium aresenide field effect transistor | |
JPS5390885A (en) | Integrated semiconductor device containing mis transistor and its manufacture | |
JPS5346288A (en) | Mis type semiconductor device | |
JPS5366179A (en) | Semiconductor device | |
JPS5220769A (en) | Longitudinal semi-conductor unit | |
JPS5286086A (en) | Field effect transistor | |
JPS57121271A (en) | Field effect transistor | |
JPS5384575A (en) | Semicocductor device | |
JPS538080A (en) | Insulated gate type field effect transistor | |
JPS5339088A (en) | Insulated gate type field effect semiconductor device | |
JPS55108773A (en) | Insulating gate type field effect transistor | |
JPS52141580A (en) | Manufacture of mos-type semiconductor device | |
JPS52100877A (en) | Field effect transistor of junction type | |
JPS5364480A (en) | Field effect semiconductor device | |
JPS5214382A (en) | Semiconductor device | |
JPS5317284A (en) | Production of semiconductor device | |
JPS5412566A (en) | Production of semiconductor device | |
JPS53125779A (en) | Mos type semiconductor device | |
JPS539488A (en) | Production of semiconductor device | |
JPS52146186A (en) | Semiconductor device |