JPS5550636A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5550636A JPS5550636A JP12362878A JP12362878A JPS5550636A JP S5550636 A JPS5550636 A JP S5550636A JP 12362878 A JP12362878 A JP 12362878A JP 12362878 A JP12362878 A JP 12362878A JP S5550636 A JPS5550636 A JP S5550636A
- Authority
- JP
- Japan
- Prior art keywords
- separation region
- sio
- manufactured
- lateral direction
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000000926 separation method Methods 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- 238000009279 wet oxidation reaction Methods 0.000 abstract 1
Landscapes
- Recrystallisation Techniques (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12362878A JPS5550636A (en) | 1978-10-09 | 1978-10-09 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12362878A JPS5550636A (en) | 1978-10-09 | 1978-10-09 | Preparation of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5550636A true JPS5550636A (en) | 1980-04-12 |
| JPS6136381B2 JPS6136381B2 (enrdf_load_stackoverflow) | 1986-08-18 |
Family
ID=14865281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12362878A Granted JPS5550636A (en) | 1978-10-09 | 1978-10-09 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5550636A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5939581U (ja) * | 1982-09-02 | 1984-03-13 | 三洋電機株式会社 | 白バランス補正回路 |
| US5653802A (en) * | 1988-03-27 | 1997-08-05 | Canon Kabushiki Kaisha | Method for forming crystal |
| US5733369A (en) * | 1986-03-28 | 1998-03-31 | Canon Kabushiki Kaisha | Method for forming crystal |
| US5846320A (en) * | 1986-03-31 | 1998-12-08 | Canon Kabushiki Kaisha | Method for forming crystal and crystal article obtained by said method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0259886U (enrdf_load_stackoverflow) * | 1988-10-17 | 1990-05-01 |
-
1978
- 1978-10-09 JP JP12362878A patent/JPS5550636A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5939581U (ja) * | 1982-09-02 | 1984-03-13 | 三洋電機株式会社 | 白バランス補正回路 |
| US5733369A (en) * | 1986-03-28 | 1998-03-31 | Canon Kabushiki Kaisha | Method for forming crystal |
| US5853478A (en) * | 1986-03-28 | 1998-12-29 | Canon Kabushiki Kaisha | Method for forming crystal and crystal article obtained by said method |
| US5846320A (en) * | 1986-03-31 | 1998-12-08 | Canon Kabushiki Kaisha | Method for forming crystal and crystal article obtained by said method |
| US5653802A (en) * | 1988-03-27 | 1997-08-05 | Canon Kabushiki Kaisha | Method for forming crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6136381B2 (enrdf_load_stackoverflow) | 1986-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5735341A (en) | Method of seperating elements of semiconductor device | |
| JPS55160444A (en) | Manufacture of semiconductor device | |
| JPS5673446A (en) | Manufacture of semiconductor device | |
| JPS5799777A (en) | Metal oxide semiconductor type semiconductor device | |
| JPS5561037A (en) | Preparation of semiconductor device | |
| JPS5550636A (en) | Preparation of semiconductor device | |
| JPS57199221A (en) | Manufacture of semiconductor device | |
| JPS54154272A (en) | Contact forming method for semiconductor device | |
| JPS57154855A (en) | Manufacture of semiconductor device | |
| JPS5792858A (en) | Semiconductor integrated circuit device and manufacture thereof | |
| JPS5444870A (en) | Manufacture of semiconductor device | |
| JPS5444880A (en) | Manufacture of semiconductor device | |
| JPS5515230A (en) | Semiconductor device and its manufacturing method | |
| JPS5458381A (en) | Manufacture for semiconductor device | |
| JPS54109783A (en) | Manufacture of semiconductor device | |
| JPS5529106A (en) | Manufacturing of semiconductor device | |
| JPS5754343A (ja) | Hantenboshiryoikinokeiseihoho | |
| JPS5575245A (en) | Method of fabricating semiconductor device | |
| JPS5512768A (en) | Manufactureing method of double-layer multi-crystal silicon structure mos type integrated circuit | |
| JPS5550634A (en) | Preparation of semiconductor integrated circuit | |
| JPS57202756A (en) | Manufacture of semiconductor device | |
| JPS5762542A (en) | Manufacture of semiconductor device | |
| JPS57130418A (en) | Manufacture of semiconductor device | |
| JPS5519831A (en) | Semiconductor device manufacturing method | |
| JPS54148389A (en) | Manufacture of semiconductor device |