JPS554950A - Semi-conductor device - Google Patents
Semi-conductor deviceInfo
- Publication number
- JPS554950A JPS554950A JP7745578A JP7745578A JPS554950A JP S554950 A JPS554950 A JP S554950A JP 7745578 A JP7745578 A JP 7745578A JP 7745578 A JP7745578 A JP 7745578A JP S554950 A JPS554950 A JP S554950A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semi
- mosfet
- conductor
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Non-Volatile Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7745578A JPS554950A (en) | 1978-06-28 | 1978-06-28 | Semi-conductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7745578A JPS554950A (en) | 1978-06-28 | 1978-06-28 | Semi-conductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS554950A true JPS554950A (en) | 1980-01-14 |
| JPS62592B2 JPS62592B2 (enExample) | 1987-01-08 |
Family
ID=13634479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7745578A Granted JPS554950A (en) | 1978-06-28 | 1978-06-28 | Semi-conductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS554950A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5990078U (ja) * | 1982-12-10 | 1984-06-18 | スズキ株式会社 | 内燃機関の点火時期制御装置 |
| JPS62235772A (ja) * | 1986-04-07 | 1987-10-15 | Matsushita Electronics Corp | 半導体記憶装置 |
-
1978
- 1978-06-28 JP JP7745578A patent/JPS554950A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5990078U (ja) * | 1982-12-10 | 1984-06-18 | スズキ株式会社 | 内燃機関の点火時期制御装置 |
| JPS62235772A (ja) * | 1986-04-07 | 1987-10-15 | Matsushita Electronics Corp | 半導体記憶装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62592B2 (enExample) | 1987-01-08 |
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