JPS554937A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS554937A
JPS554937A JP7698678A JP7698678A JPS554937A JP S554937 A JPS554937 A JP S554937A JP 7698678 A JP7698678 A JP 7698678A JP 7698678 A JP7698678 A JP 7698678A JP S554937 A JPS554937 A JP S554937A
Authority
JP
Japan
Prior art keywords
etching
etched
parts
covering
impinged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7698678A
Other languages
Japanese (ja)
Other versions
JPS6350854B2 (en
Inventor
Hiroshi Yano
Tetsuya Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7698678A priority Critical patent/JPS554937A/en
Publication of JPS554937A publication Critical patent/JPS554937A/en
Publication of JPS6350854B2 publication Critical patent/JPS6350854B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent a base plate to be etched from contamination by covering a device's section, which is impinged by an ingredient generated and participating in the etching, with a material of surface exposed by dry etching of an object to be etched.
CONSTITUTION: In an ion beam etching device, those parts which are possible to be impinged by inert gas ion include an inner wall in a processing chamber 2, a water- cooled base plate holder 5, a grid 10, a neutralizing filament 11 and a shutter current density monitor 12, These parts, prior to being assembled, are covered by a base material measuring approximately 1W10μm and constituting a material to be etched. In the case of a plasma etching device, a stainless etching tunnel and surface of a test piece holder are provided with similar covering. As a result, this covering film prevent a semi-conductor element from being contaminated by impure metal of parts of the device.
COPYRIGHT: (C)1980,JPO&Japio
JP7698678A 1978-06-27 1978-06-27 Dry etching method Granted JPS554937A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7698678A JPS554937A (en) 1978-06-27 1978-06-27 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7698678A JPS554937A (en) 1978-06-27 1978-06-27 Dry etching method

Publications (2)

Publication Number Publication Date
JPS554937A true JPS554937A (en) 1980-01-14
JPS6350854B2 JPS6350854B2 (en) 1988-10-12

Family

ID=13621090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7698678A Granted JPS554937A (en) 1978-06-27 1978-06-27 Dry etching method

Country Status (1)

Country Link
JP (1) JPS554937A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341616A (en) * 1980-01-25 1982-07-27 Mitsubishi Denki Kabushiki Kaisha Dry etching device
JPS6084762U (en) * 1983-11-15 1985-06-11 愛三工業株式会社 Mixture supply device for internal combustion engine
JPS62279626A (en) * 1986-05-27 1987-12-04 M Setetsuku Kk Impurity doping method for semiconductor substrate
JPH04229619A (en) * 1990-05-21 1992-08-19 Applied Materials Inc Plasma etching device having conductive coating designed to protect from chemi- cal corrosion on inner metal surface in chamber and formation method
US8850715B2 (en) * 2006-09-07 2014-10-07 Eisenmann Ag Process and installation for drying articles

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52130288A (en) * 1976-04-26 1977-11-01 Hitachi Ltd Patterning method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52130288A (en) * 1976-04-26 1977-11-01 Hitachi Ltd Patterning method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341616A (en) * 1980-01-25 1982-07-27 Mitsubishi Denki Kabushiki Kaisha Dry etching device
JPS6084762U (en) * 1983-11-15 1985-06-11 愛三工業株式会社 Mixture supply device for internal combustion engine
JPS62279626A (en) * 1986-05-27 1987-12-04 M Setetsuku Kk Impurity doping method for semiconductor substrate
JPH0516656B2 (en) * 1986-05-27 1993-03-05 Emu Setetsuku Kk
JPH04229619A (en) * 1990-05-21 1992-08-19 Applied Materials Inc Plasma etching device having conductive coating designed to protect from chemi- cal corrosion on inner metal surface in chamber and formation method
US8850715B2 (en) * 2006-09-07 2014-10-07 Eisenmann Ag Process and installation for drying articles

Also Published As

Publication number Publication date
JPS6350854B2 (en) 1988-10-12

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