JPS5544748A - Field-effect transistor - Google Patents
Field-effect transistorInfo
- Publication number
- JPS5544748A JPS5544748A JP11821478A JP11821478A JPS5544748A JP S5544748 A JPS5544748 A JP S5544748A JP 11821478 A JP11821478 A JP 11821478A JP 11821478 A JP11821478 A JP 11821478A JP S5544748 A JPS5544748 A JP S5544748A
- Authority
- JP
- Japan
- Prior art keywords
- region
- impurities
- drain region
- depth
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11821478A JPS5544748A (en) | 1978-09-25 | 1978-09-25 | Field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11821478A JPS5544748A (en) | 1978-09-25 | 1978-09-25 | Field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5544748A true JPS5544748A (en) | 1980-03-29 |
Family
ID=14731028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11821478A Pending JPS5544748A (en) | 1978-09-25 | 1978-09-25 | Field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5544748A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6022780A (en) * | 1996-12-06 | 2000-02-08 | Nec Corporation | Semiconductor device having source and drain regions different in depth from each other and process of fabrication thereof |
US6268627B1 (en) | 1998-06-09 | 2001-07-31 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having impurity regions with varying impurity concentrations |
US7622343B2 (en) | 1992-10-30 | 2009-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same |
US20120119272A1 (en) * | 2010-11-16 | 2012-05-17 | Canon Kabushiki Kaisha | Solid-state image sensor, method of manufacturing the same, and imaging system |
-
1978
- 1978-09-25 JP JP11821478A patent/JPS5544748A/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7622343B2 (en) | 1992-10-30 | 2009-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same |
US6022780A (en) * | 1996-12-06 | 2000-02-08 | Nec Corporation | Semiconductor device having source and drain regions different in depth from each other and process of fabrication thereof |
US6268627B1 (en) | 1998-06-09 | 2001-07-31 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having impurity regions with varying impurity concentrations |
DE19860119C2 (de) * | 1998-06-09 | 2003-04-30 | Mitsubishi Electric Corp | SRAM-Halbleiterspeichervorrichtung |
US20120119272A1 (en) * | 2010-11-16 | 2012-05-17 | Canon Kabushiki Kaisha | Solid-state image sensor, method of manufacturing the same, and imaging system |
US8952433B2 (en) * | 2010-11-16 | 2015-02-10 | Canon Kabushiki Kaisha | Solid-state image sensor, method of manufacturing the same, and imaging system |
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