JPS5544703A - Mos semiconductor device - Google Patents
Mos semiconductor deviceInfo
- Publication number
- JPS5544703A JPS5544703A JP11655678A JP11655678A JPS5544703A JP S5544703 A JPS5544703 A JP S5544703A JP 11655678 A JP11655678 A JP 11655678A JP 11655678 A JP11655678 A JP 11655678A JP S5544703 A JPS5544703 A JP S5544703A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate
- resistor
- source
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE: To prevent charging of a gate during the manufacturing by forming an insulated resistor on a semiconductor substrate; connecting one end of the resistor to the gate of a dummy MOSFET; and by connecting the other end to the substrate, or the source on drain of a FET.
CONSTITUTION: A silicon oxide film 2, a drain-and source-diffused layer 3, and a polycrystal silicon film 4 which is to become a gate are formed on the surface of a semiconductor substrate 1 by a specified method, and a phosphorus glass film 5 for stabilizing the surface of the substrate 1 and for insulating layers of two-layer wirings is formed. Gate, drain, and source electrodes 6G, 6D, and 6S, and a surface-protecting film 7 made of a plasma-nitride film are formed on the film 5. A polycrystal silicon resistor 40 which is formed by the film 4 is provided in such a semiconductor device. One end of the resistor 40 is connected to the film 4 which becomes the gate 6G, and the extension thereof is snaked so as to obtain a specified resistance value. The other end of the resistor 40 is connected to an Al wiring 60 which is connected to the source 6S of the MOSFET, thereby charging of the gate during the manufacturing is prevented.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11655678A JPS5544703A (en) | 1978-09-25 | 1978-09-25 | Mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11655678A JPS5544703A (en) | 1978-09-25 | 1978-09-25 | Mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5544703A true JPS5544703A (en) | 1980-03-29 |
Family
ID=14690029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11655678A Pending JPS5544703A (en) | 1978-09-25 | 1978-09-25 | Mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5544703A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58187397A (en) * | 1982-04-08 | 1983-11-01 | ガオ・ゲゼルシヤフト・フユア・アウトマチオン・ウント・オルガニザチオン・ミツト・ベシユレンクテル・ハフツング | Multilayer type identification card and its manufacture |
-
1978
- 1978-09-25 JP JP11655678A patent/JPS5544703A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58187397A (en) * | 1982-04-08 | 1983-11-01 | ガオ・ゲゼルシヤフト・フユア・アウトマチオン・ウント・オルガニザチオン・ミツト・ベシユレンクテル・ハフツング | Multilayer type identification card and its manufacture |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57143858A (en) | Semiconductor integrated circuit | |
| JPS5457875A (en) | Semiconductor nonvolatile memory device | |
| JPS5736844A (en) | Semiconductor device | |
| JPS5696850A (en) | Semiconductor device and manufacture thereof | |
| EP0081226A3 (en) | Method of making semiconductor device | |
| JPS5643749A (en) | Semiconductor device and its manufacture | |
| JPS5544703A (en) | Mos semiconductor device | |
| JPS5650533A (en) | Semiconductor device | |
| JPS5585068A (en) | Preparation of semiconductor device | |
| JPS56125875A (en) | Semiconductor integrated circuit device | |
| JPS5679472A (en) | Preparing method of mos-type semiconductor device | |
| JPS6425551A (en) | Semiconductor device | |
| JPS5461490A (en) | Multi-layer wiring forming method in semiconductor device | |
| JPS56146254A (en) | Manufacture of semiconductor device | |
| JPS52130580A (en) | High densityintegrated circuit device | |
| JPS6489457A (en) | Manufacture of semiconductor device | |
| JPS55113344A (en) | Electrode wiring and its manufacture | |
| JPS54139374A (en) | Semiconductor device | |
| JPS5411687A (en) | Manufacture for semiconductor integrated circuit | |
| JPS5688366A (en) | Semiconductor device | |
| JPS5687346A (en) | Manufacture of semiconductor device | |
| JPS55108771A (en) | Semiconductor device | |
| JPS53144686A (en) | Production of semiconductor device | |
| JPS566464A (en) | Semiconductor device and manufacture thereof | |
| JPS57196577A (en) | Manufacture of semiconductor device |