JPS5534432A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5534432A
JPS5534432A JP10647078A JP10647078A JPS5534432A JP S5534432 A JPS5534432 A JP S5534432A JP 10647078 A JP10647078 A JP 10647078A JP 10647078 A JP10647078 A JP 10647078A JP S5534432 A JPS5534432 A JP S5534432A
Authority
JP
Japan
Prior art keywords
electrons
floating gate
nose portion
semiconductor substrate
shaped groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10647078A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6135712B2 (enrdf_load_stackoverflow
Inventor
Yoshiiku Togei
Kunihiko Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10647078A priority Critical patent/JPS5534432A/ja
Publication of JPS5534432A publication Critical patent/JPS5534432A/ja
Publication of JPS6135712B2 publication Critical patent/JPS6135712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP10647078A 1978-08-31 1978-08-31 Semiconductor device Granted JPS5534432A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10647078A JPS5534432A (en) 1978-08-31 1978-08-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10647078A JPS5534432A (en) 1978-08-31 1978-08-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5534432A true JPS5534432A (en) 1980-03-11
JPS6135712B2 JPS6135712B2 (enrdf_load_stackoverflow) 1986-08-14

Family

ID=14434412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10647078A Granted JPS5534432A (en) 1978-08-31 1978-08-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5534432A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160166A (en) * 1981-03-27 1982-10-02 Seiko Instr & Electronics Ltd Non-volatile semiconductor memory
JPS59154073A (ja) * 1983-02-22 1984-09-03 Seiko Epson Corp 半導体装置
US6060739A (en) * 1996-12-20 2000-05-09 Nec Corporation Non-volatile semiconductor memory device having a floating gate inside a grove
US6563163B1 (en) 1999-05-18 2003-05-13 Hiroshima University Nonvolatile memory using deep level capture of carrier at corner structure of oxide film
KR100525256B1 (ko) * 1999-01-27 2005-11-02 후지쯔 가부시끼가이샤 불휘발성 반도체 기억 장치 및 그 제조 방법

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160166A (en) * 1981-03-27 1982-10-02 Seiko Instr & Electronics Ltd Non-volatile semiconductor memory
JPS59154073A (ja) * 1983-02-22 1984-09-03 Seiko Epson Corp 半導体装置
US6060739A (en) * 1996-12-20 2000-05-09 Nec Corporation Non-volatile semiconductor memory device having a floating gate inside a grove
KR100525256B1 (ko) * 1999-01-27 2005-11-02 후지쯔 가부시끼가이샤 불휘발성 반도체 기억 장치 및 그 제조 방법
US6563163B1 (en) 1999-05-18 2003-05-13 Hiroshima University Nonvolatile memory using deep level capture of carrier at corner structure of oxide film

Also Published As

Publication number Publication date
JPS6135712B2 (enrdf_load_stackoverflow) 1986-08-14

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