JPS55166958A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55166958A
JPS55166958A JP7456179A JP7456179A JPS55166958A JP S55166958 A JPS55166958 A JP S55166958A JP 7456179 A JP7456179 A JP 7456179A JP 7456179 A JP7456179 A JP 7456179A JP S55166958 A JPS55166958 A JP S55166958A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
film
gate insulating
silicon film
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7456179A
Other languages
English (en)
Inventor
Hiroshi Tetsuda
Masaki Yoshimaru
Masayoshi Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP7456179A priority Critical patent/JPS55166958A/ja
Publication of JPS55166958A publication Critical patent/JPS55166958A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
JP7456179A 1979-06-15 1979-06-15 Manufacture of semiconductor device Pending JPS55166958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7456179A JPS55166958A (en) 1979-06-15 1979-06-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7456179A JPS55166958A (en) 1979-06-15 1979-06-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55166958A true JPS55166958A (en) 1980-12-26

Family

ID=13550753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7456179A Pending JPS55166958A (en) 1979-06-15 1979-06-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55166958A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754373A (ja) * 1980-09-19 1982-03-31 Matsushita Electric Ind Co Ltd Nosgatahandotaisochinoseizohoho
JPS5824376U (ja) * 1981-08-12 1983-02-16 株式会社新日本企画 訪問カ−ド
JPS63318753A (ja) * 1987-06-22 1988-12-27 Nec Corp 半導体装置及びその製造方法
JPS6484719A (en) * 1987-09-28 1989-03-30 Matsushita Electronics Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112187A (en) * 1975-03-28 1976-10-04 Matsushita Electric Ind Co Ltd Processing method of semiconductor equipment
JPS51118391A (en) * 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Manufacturing process for semiconducter unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112187A (en) * 1975-03-28 1976-10-04 Matsushita Electric Ind Co Ltd Processing method of semiconductor equipment
JPS51118391A (en) * 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Manufacturing process for semiconducter unit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754373A (ja) * 1980-09-19 1982-03-31 Matsushita Electric Ind Co Ltd Nosgatahandotaisochinoseizohoho
JPH0263297B2 (ja) * 1980-09-19 1990-12-27 Matsushita Electric Ind Co Ltd
JPS5824376U (ja) * 1981-08-12 1983-02-16 株式会社新日本企画 訪問カ−ド
JPS63318753A (ja) * 1987-06-22 1988-12-27 Nec Corp 半導体装置及びその製造方法
JPS6484719A (en) * 1987-09-28 1989-03-30 Matsushita Electronics Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPH05145027A (ja) シリコン集積回路の製造に於ける欠陥形成の制御方法、酸化膜の品質及び欠陥形成の制御方法、二重拡散集積回路デバイスセルと、集積回路ｍｏｓｆｅｔセルの形成方法
JPS55166958A (en) Manufacture of semiconductor device
US4259779A (en) Method of making radiation resistant MOS transistor
JPS5632742A (en) Manufacture of semiconductor device
JPS56138920A (en) Method of selection and diffusion for impurities
JPS57159066A (en) Manufacture of semiconductor device
JPS55157241A (en) Manufacture of semiconductor device
JPS5583263A (en) Mos semiconductor device
JPS55165681A (en) Preparation of semiconductor device
KR100256803B1 (ko) 반도체 소자의 얇은 접합 형성방법
JPS55107229A (en) Method of manufacturing semiconductor device
JPS6122669A (ja) 薄膜トランジスタ及びその製造方法
JPS5518042A (en) Method of fabricating semiconductor device
GB1432309A (en) Semiconductor structures
JPS5670665A (en) Manufacture of semiconductor device
JPS56130970A (en) Manufacture of semiconductor device
JPS6465874A (en) Manufacture of semiconductor device
JPS5638868A (en) Manufacture of semiconductor device
JPS6465875A (en) Thin film transistor and manufacture thereof
JPS57132357A (en) Manufacture of semiconductor element
JPS6439763A (en) Manufacture of semiconductor device
JPS6446976A (en) Manufacture of semiconductor integrated circuit device
JPS6415916A (en) Manufacture of semiconductor device
JPS6439773A (en) Manufacture of semiconductor device
JPS55121681A (en) Manufacture of semiconductor device