JPS55165676A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55165676A
JPS55165676A JP7290379A JP7290379A JPS55165676A JP S55165676 A JPS55165676 A JP S55165676A JP 7290379 A JP7290379 A JP 7290379A JP 7290379 A JP7290379 A JP 7290379A JP S55165676 A JPS55165676 A JP S55165676A
Authority
JP
Japan
Prior art keywords
layer
gate
region
type
comb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7290379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6152585B2 (enrdf_load_html_response
Inventor
Tetsuo Sueoka
Satoshi Ishibashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP7290379A priority Critical patent/JPS55165676A/ja
Publication of JPS55165676A publication Critical patent/JPS55165676A/ja
Publication of JPS6152585B2 publication Critical patent/JPS6152585B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148Cathode regions of thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192Base regions of thyristors
    • H10D62/206Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP7290379A 1979-06-09 1979-06-09 Semiconductor device Granted JPS55165676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7290379A JPS55165676A (en) 1979-06-09 1979-06-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7290379A JPS55165676A (en) 1979-06-09 1979-06-09 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55165676A true JPS55165676A (en) 1980-12-24
JPS6152585B2 JPS6152585B2 (enrdf_load_html_response) 1986-11-13

Family

ID=13502763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7290379A Granted JPS55165676A (en) 1979-06-09 1979-06-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55165676A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03127021U (enrdf_load_html_response) * 1990-04-02 1991-12-20

Also Published As

Publication number Publication date
JPS6152585B2 (enrdf_load_html_response) 1986-11-13

Similar Documents

Publication Publication Date Title
JPS55165676A (en) Semiconductor device
JPS566480A (en) Semiconductor light emitting diode
JPS5778171A (en) Thyristor
JPS568817A (en) Manufacture of semiconductor device
JPS56114381A (en) Semiconductor device
SE7707251L (sv) Halvledardiod for integrerad krets
JPS53145578A (en) Diode varister
JPS5780769A (en) Semiconductor device
JPS6482565A (en) Field-effect semiconductor device
JPS5295984A (en) Vertical junction type field effect transistor
JPS547891A (en) Manufacture for planar semiconductor light emission device
JPS5676582A (en) Semiconductor device
JPS5667970A (en) Gate turn-off thyristor
JPS5571062A (en) Iil type semiconductor device
JPS5538080A (en) Semiconductor device
JPS5610925A (en) Preparation of semiconductor device
JPS5563879A (en) Semiconductor device
JPS5287990A (en) Semiconductor device
JPS5688361A (en) Static induction type reverse conductivity thyristor
JPS5673461A (en) Semiconductor device
JPS54102993A (en) Optical semiconductor device
JPS5595374A (en) Semiconductor device
JPS55154764A (en) Heat-sensitive switching device
JPS5784174A (en) Manufacture of electrostatic induction type semiconductor device
JPS55125626A (en) Production of semiconductor device