JPS55164077A - Method for etching by gas plasma - Google Patents

Method for etching by gas plasma

Info

Publication number
JPS55164077A
JPS55164077A JP7287479A JP7287479A JPS55164077A JP S55164077 A JPS55164077 A JP S55164077A JP 7287479 A JP7287479 A JP 7287479A JP 7287479 A JP7287479 A JP 7287479A JP S55164077 A JPS55164077 A JP S55164077A
Authority
JP
Japan
Prior art keywords
gas
etching
plasma
oxide film
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7287479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6151036B2 (enrdf_load_stackoverflow
Inventor
Hiroyasu Toyoda
Hiroyoshi Komiya
Hideaki Itakura
Mineto Tobinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7287479A priority Critical patent/JPS55164077A/ja
Publication of JPS55164077A publication Critical patent/JPS55164077A/ja
Publication of JPS6151036B2 publication Critical patent/JPS6151036B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP7287479A 1979-06-08 1979-06-08 Method for etching by gas plasma Granted JPS55164077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7287479A JPS55164077A (en) 1979-06-08 1979-06-08 Method for etching by gas plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7287479A JPS55164077A (en) 1979-06-08 1979-06-08 Method for etching by gas plasma

Publications (2)

Publication Number Publication Date
JPS55164077A true JPS55164077A (en) 1980-12-20
JPS6151036B2 JPS6151036B2 (enrdf_load_stackoverflow) 1986-11-07

Family

ID=13501906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7287479A Granted JPS55164077A (en) 1979-06-08 1979-06-08 Method for etching by gas plasma

Country Status (1)

Country Link
JP (1) JPS55164077A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190320A (en) * 1981-05-20 1982-11-22 Toshiba Corp Dry etching method
US6884666B2 (en) 1999-08-31 2005-04-26 Fujitsu Limited Thin film transistor, liquid crystal display substrate, and their manufacture methods

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02129037U (enrdf_load_stackoverflow) * 1989-04-01 1990-10-24

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.VAC.SCI.TECHNOL.=1979 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190320A (en) * 1981-05-20 1982-11-22 Toshiba Corp Dry etching method
US6884666B2 (en) 1999-08-31 2005-04-26 Fujitsu Limited Thin film transistor, liquid crystal display substrate, and their manufacture methods
US6912019B2 (en) * 1999-08-31 2005-06-28 Fujitsu Limited Method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
JPS6151036B2 (enrdf_load_stackoverflow) 1986-11-07

Similar Documents

Publication Publication Date Title
EP0304046A3 (en) A method of stripping a resist mask
KR930020591A (ko) 건식에칭방법
KR870002750A (ko) 실리콘의 플라즈마 에칭방법
GB2069936A (en) Two-step plasma etching process
IE811531L (en) Manufacturing a semiconductor device using a gas mixture
JPS57155732A (en) Dry etching
JPS5684476A (en) Etching method of gas plasma
JPS56139676A (en) Method and apparatus for etching metal sheet
KR970052763A (ko) 반도체 소자의 폴리머 제거 방법
JPS56122129A (en) Manufacture of semiconductor device
KR930014829A (ko) 에칭방법
JPS53112065A (en) Removing method of high molecular compound
JPS55164077A (en) Method for etching by gas plasma
JPS56123377A (en) Plasma cleaning and etching method
JPS6425419A (en) Etching
JPS5587438A (en) Manufacture of semiconductor device
JPS57130431A (en) Manufacture of semiconductor device
JPS5530826A (en) Method of manufacturing semiconductor device
JPS57108267A (en) Etching method
EP0066042A3 (en) Methods of processing a silicon substrate for the formation of an integrated circuit therein
JPS5515290A (en) Manufacturing method of semiconductor device
JPS5658972A (en) Dry etching method
JPS56169776A (en) Selective dry etching method
JPS5444870A (en) Manufacture of semiconductor device
JPS5547381A (en) Plasma etching method