JPS55163879A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55163879A
JPS55163879A JP7273979A JP7273979A JPS55163879A JP S55163879 A JPS55163879 A JP S55163879A JP 7273979 A JP7273979 A JP 7273979A JP 7273979 A JP7273979 A JP 7273979A JP S55163879 A JPS55163879 A JP S55163879A
Authority
JP
Japan
Prior art keywords
glass layer
mask
pattern
wiring
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7273979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6159668B2 (enrdf_load_stackoverflow
Inventor
Eizo Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7273979A priority Critical patent/JPS55163879A/ja
Publication of JPS55163879A publication Critical patent/JPS55163879A/ja
Publication of JPS6159668B2 publication Critical patent/JPS6159668B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP7273979A 1979-06-08 1979-06-08 Manufacture of semiconductor device Granted JPS55163879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7273979A JPS55163879A (en) 1979-06-08 1979-06-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7273979A JPS55163879A (en) 1979-06-08 1979-06-08 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55163879A true JPS55163879A (en) 1980-12-20
JPS6159668B2 JPS6159668B2 (enrdf_load_stackoverflow) 1986-12-17

Family

ID=13498019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7273979A Granted JPS55163879A (en) 1979-06-08 1979-06-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55163879A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992012534A1 (en) * 1991-01-01 1992-07-23 Tadahiro Ohmi Apparatus for forming thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992012534A1 (en) * 1991-01-01 1992-07-23 Tadahiro Ohmi Apparatus for forming thin film
US5372647A (en) * 1991-01-01 1994-12-13 Ohmi; Tadahiro Apparatus for forming thin film

Also Published As

Publication number Publication date
JPS6159668B2 (enrdf_load_stackoverflow) 1986-12-17

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