JPS55163855A - Method of opening sealed electronic part sealed by epoxy resin - Google Patents

Method of opening sealed electronic part sealed by epoxy resin

Info

Publication number
JPS55163855A
JPS55163855A JP7189579A JP7189579A JPS55163855A JP S55163855 A JPS55163855 A JP S55163855A JP 7189579 A JP7189579 A JP 7189579A JP 7189579 A JP7189579 A JP 7189579A JP S55163855 A JPS55163855 A JP S55163855A
Authority
JP
Japan
Prior art keywords
epoxy resin
molded
sealed
electronic part
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7189579A
Other languages
Japanese (ja)
Other versions
JPS5942976B2 (en
Inventor
Kazuo Nakamura
Kenichi Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54071895A priority Critical patent/JPS5942976B2/en
Publication of JPS55163855A publication Critical patent/JPS55163855A/en
Publication of JPS5942976B2 publication Critical patent/JPS5942976B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To open the sealing of an epoxy resin sealed electronic part without affecting adversely the interior part by treating it with a mixture solution of 1 volume of concentrated nitric acid and 5-20 volumes of concentrated sufuric acid. CONSTITUTION:A semiconductor element 1 is secured onto a substrate 2, is connected through a fine wire 4 to an external lead wire 3, and is molded with resin 5 made of epoxy resin to form a molded IC. When opening the molded IC, a hole 6 is perforated at the top of the resin 5 and removed partly. The perforated IC is heated at 60-150 deg.C at the mixture solution containing 1 volume of concentrated nitric acid and 5-20 volumes of concentrated sulfuric acid, and dipped therein to remove the epoxy resin until the semiconductor element 1 is exposed.
JP54071895A 1979-06-08 1979-06-08 How to open epoxy resin-sealed electronic components Expired JPS5942976B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54071895A JPS5942976B2 (en) 1979-06-08 1979-06-08 How to open epoxy resin-sealed electronic components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54071895A JPS5942976B2 (en) 1979-06-08 1979-06-08 How to open epoxy resin-sealed electronic components

Publications (2)

Publication Number Publication Date
JPS55163855A true JPS55163855A (en) 1980-12-20
JPS5942976B2 JPS5942976B2 (en) 1984-10-18

Family

ID=13473717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54071895A Expired JPS5942976B2 (en) 1979-06-08 1979-06-08 How to open epoxy resin-sealed electronic components

Country Status (1)

Country Link
JP (1) JPS5942976B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4921810A (en) * 1988-06-22 1990-05-01 Nec Electronics Inc. Method for testing semiconductor devices
US5424254A (en) * 1994-02-22 1995-06-13 International Business Machines Corporation Process for recovering bare semiconductor chips from plastic packaged modules by thermal shock
US5424249A (en) * 1992-01-23 1995-06-13 Mitsubishi Denki Kabushiki Kaisha Method of making mold-packaged pressure sensing semiconductor device
EP2490250A1 (en) * 2011-02-18 2012-08-22 Robert Bosch GmbH Mould module with sensor element

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179278U (en) * 1988-06-08 1989-12-22

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4921810A (en) * 1988-06-22 1990-05-01 Nec Electronics Inc. Method for testing semiconductor devices
US5424249A (en) * 1992-01-23 1995-06-13 Mitsubishi Denki Kabushiki Kaisha Method of making mold-packaged pressure sensing semiconductor device
US5424254A (en) * 1994-02-22 1995-06-13 International Business Machines Corporation Process for recovering bare semiconductor chips from plastic packaged modules by thermal shock
EP0668611A1 (en) * 1994-02-22 1995-08-23 International Business Machines Corporation Method for recovering bare semiconductor chips from plastic packaged modules
CN1039756C (en) * 1994-02-22 1998-09-09 国际商业机器公司 Method for recovering bare semiconductor chips from plastic packaged moduler
EP2490250A1 (en) * 2011-02-18 2012-08-22 Robert Bosch GmbH Mould module with sensor element

Also Published As

Publication number Publication date
JPS5942976B2 (en) 1984-10-18

Similar Documents

Publication Publication Date Title
JPS55163855A (en) Method of opening sealed electronic part sealed by epoxy resin
JPS5543878A (en) Circuit unit
JPS5487474A (en) Semiconductor device
JPS56116634A (en) Semiconductor device
JPS54124677A (en) Semiconductor device
JPS56164543A (en) Manufacture of semiconductor device
JPS54149582A (en) Manufacture of resin-sealed semiconductor device
JPS55138241A (en) Sealing structure for semiconductor device
JPS5776867A (en) Semiconductor device
JPS5623755A (en) Assembly of semiconductor device
JPS5792851A (en) Manufacture of hybrid integrated circuit device
JPS57154863A (en) Manufacture of resin sealing type electronic parts
JPS5277669A (en) Plastic ic case
JPS55158653A (en) Hybrid integrated circuit device
JPS5636145A (en) Thin semiconductor integrated circuit device and its manufacture
JPS5745957A (en) Circuit substrate and manufacture thereof
JPS56101759A (en) Semiconductor integrated circuit device
JPS572537A (en) Semiconductor device
JPS5487476A (en) Resin-sealed type semiconductor device
JPS56158462A (en) Lead frame for single inline semiconductor device
JPS5754358A (en) Integrated circuit device
JPS5721843A (en) Semiconductor device
JPS5487181A (en) Resin sealing method for semiconductor element
JPS5524478A (en) Integrated circuit
JPS5577165A (en) Semiconductor device