JPS56164543A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56164543A
JPS56164543A JP6781080A JP6781080A JPS56164543A JP S56164543 A JPS56164543 A JP S56164543A JP 6781080 A JP6781080 A JP 6781080A JP 6781080 A JP6781080 A JP 6781080A JP S56164543 A JPS56164543 A JP S56164543A
Authority
JP
Japan
Prior art keywords
hole
hollow
substance
poured
molded body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6781080A
Other languages
Japanese (ja)
Inventor
Yoshiaki Wakashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6781080A priority Critical patent/JPS56164543A/en
Publication of JPS56164543A publication Critical patent/JPS56164543A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To improve thermal radiation, airtightness, and impact resistance by previously boring a hole in a molded body in a molding process for hollow resin molded body wherein a liquid having a specific condition is poured into a hollow section from the hole after sealing. CONSTITUTION:A lead frame 1 connecting a chip 2 is held by hollow resin molded bodies 3, 4 and sealed by connecting a hold section. A hole 5 is provided at the upper molded body 3, for example, and a substance 6 having good electrical insulation, water repellent quality, thermal conductivity is poured into the inside of the hollow bodies from the hole 5 after sealing and the hole 5 is clogged by a stopper 7 or the like after pouring the substance 6. As the poured substance, for example, silicon oil or the like combined inorganic oxide powder or epoxy resin combined the above powder is desired. In this way, the thermal radiation, dampproof, and impact resistance of a mold by the hollow molding substance can be improved and the reliability of an element can be improved.
JP6781080A 1980-05-23 1980-05-23 Manufacture of semiconductor device Pending JPS56164543A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6781080A JPS56164543A (en) 1980-05-23 1980-05-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6781080A JPS56164543A (en) 1980-05-23 1980-05-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56164543A true JPS56164543A (en) 1981-12-17

Family

ID=13355666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6781080A Pending JPS56164543A (en) 1980-05-23 1980-05-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56164543A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130249U (en) * 1984-07-25 1986-02-24 イビデン株式会社 semiconductor equipment
JPS6138944U (en) * 1984-08-10 1986-03-11 イビデン株式会社 semiconductor equipment
JPH0595882U (en) * 1991-10-28 1993-12-27 株式会社ナガオカトレーディング Case with lens
US5413965A (en) * 1993-09-13 1995-05-09 Motorola, Inc. Method of making microelectronic device package containing a liquid

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130249U (en) * 1984-07-25 1986-02-24 イビデン株式会社 semiconductor equipment
JPS6138944U (en) * 1984-08-10 1986-03-11 イビデン株式会社 semiconductor equipment
JPH0595882U (en) * 1991-10-28 1993-12-27 株式会社ナガオカトレーディング Case with lens
US5413965A (en) * 1993-09-13 1995-05-09 Motorola, Inc. Method of making microelectronic device package containing a liquid

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