JPS55162270A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55162270A
JPS55162270A JP6928879A JP6928879A JPS55162270A JP S55162270 A JPS55162270 A JP S55162270A JP 6928879 A JP6928879 A JP 6928879A JP 6928879 A JP6928879 A JP 6928879A JP S55162270 A JPS55162270 A JP S55162270A
Authority
JP
Japan
Prior art keywords
electrode
substrate
source
layer
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6928879A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0213828B2 (enrdf_load_stackoverflow
Inventor
Yutaka Otowa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6928879A priority Critical patent/JPS55162270A/ja
Publication of JPS55162270A publication Critical patent/JPS55162270A/ja
Publication of JPH0213828B2 publication Critical patent/JPH0213828B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP6928879A 1979-06-02 1979-06-02 Semiconductor device Granted JPS55162270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6928879A JPS55162270A (en) 1979-06-02 1979-06-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6928879A JPS55162270A (en) 1979-06-02 1979-06-02 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55162270A true JPS55162270A (en) 1980-12-17
JPH0213828B2 JPH0213828B2 (enrdf_load_stackoverflow) 1990-04-05

Family

ID=13398255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6928879A Granted JPS55162270A (en) 1979-06-02 1979-06-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55162270A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885528A (ja) * 1981-11-17 1983-05-21 Olympus Optical Co Ltd 半導体装置用電極の形成方法
EP0858113A1 (en) * 1997-01-31 1998-08-12 Oki Electric Industry Co., Ltd. Semiconductor device
EP0988651B1 (en) * 1997-06-10 2013-09-25 Rovec Acquisitions Ltd. L.L.C. LDMOS transistor structure with trench source contact

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108382A (en) * 1977-03-04 1978-09-21 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108382A (en) * 1977-03-04 1978-09-21 Hitachi Ltd Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885528A (ja) * 1981-11-17 1983-05-21 Olympus Optical Co Ltd 半導体装置用電極の形成方法
EP0858113A1 (en) * 1997-01-31 1998-08-12 Oki Electric Industry Co., Ltd. Semiconductor device
US5977592A (en) * 1997-01-31 1999-11-02 Oki Electric Industry Co., Ltd. Semiconductor device having an improved structure and capable of greatly reducing its occupied area
EP0988651B1 (en) * 1997-06-10 2013-09-25 Rovec Acquisitions Ltd. L.L.C. LDMOS transistor structure with trench source contact

Also Published As

Publication number Publication date
JPH0213828B2 (enrdf_load_stackoverflow) 1990-04-05

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