JPS55150227A - Method of fabricating pattern - Google Patents

Method of fabricating pattern

Info

Publication number
JPS55150227A
JPS55150227A JP5726679A JP5726679A JPS55150227A JP S55150227 A JPS55150227 A JP S55150227A JP 5726679 A JP5726679 A JP 5726679A JP 5726679 A JP5726679 A JP 5726679A JP S55150227 A JPS55150227 A JP S55150227A
Authority
JP
Japan
Prior art keywords
region
film
coated
developing
perforate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5726679A
Other languages
Japanese (ja)
Inventor
Masaki Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5726679A priority Critical patent/JPS55150227A/en
Publication of JPS55150227A publication Critical patent/JPS55150227A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

Abstract

PURPOSE:To obtain a pattern having highly accurate relative positions by utilizing the presence of remarkably different sensitivity curves of resists according to developing temperatures and varying the developing temperature when developing the regions having different exposure amounts. CONSTITUTION:A Ti film 42 is coated on a silicon substrate 41 for an X-ray mask, a positive type resist film 44 is coated on the entire surface, and electron beam is irradiated in larger exposure amount to predetermined region A and in less exposure amount to a region B. The region A is developed at 16 deg.C for 100 seconds, with isopropyl alcohol as a developer to perforate an opening 45 only in the region A, and an Au film 46 is formed on the bottom surface by an electrodeposition process. Thereafter, liquid temperature is altered similarly to 23.5 deg.C, the region B is developing for the same time to perforate an opening 47 in the region B, an Au film 48 is coated thereon, and is also coated also on the film 46 formed beforehand. Then, the resist film 44 is isolated with methyl isobutyl ketone, the substrate 41 is back etched to form an X-ray transmission pattern having Au films of different thicknesses.
JP5726679A 1979-05-10 1979-05-10 Method of fabricating pattern Pending JPS55150227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5726679A JPS55150227A (en) 1979-05-10 1979-05-10 Method of fabricating pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5726679A JPS55150227A (en) 1979-05-10 1979-05-10 Method of fabricating pattern

Publications (1)

Publication Number Publication Date
JPS55150227A true JPS55150227A (en) 1980-11-22

Family

ID=13050718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5726679A Pending JPS55150227A (en) 1979-05-10 1979-05-10 Method of fabricating pattern

Country Status (1)

Country Link
JP (1) JPS55150227A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312793A (en) * 1976-07-23 1978-02-04 Midori Anzen Kogyo Oxygen generating apparatus
JPS53123929A (en) * 1977-04-05 1978-10-28 Tokyo Ouka Kougiyou Kk Developing liquid for use in radiant ray positive type resist
JPS545385A (en) * 1977-06-15 1979-01-16 Hitachi Ltd Production of micropattern

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312793A (en) * 1976-07-23 1978-02-04 Midori Anzen Kogyo Oxygen generating apparatus
JPS53123929A (en) * 1977-04-05 1978-10-28 Tokyo Ouka Kougiyou Kk Developing liquid for use in radiant ray positive type resist
JPS545385A (en) * 1977-06-15 1979-01-16 Hitachi Ltd Production of micropattern

Similar Documents

Publication Publication Date Title
JPS55150227A (en) Method of fabricating pattern
JPS57130432A (en) Manufacture of semiconductor device
JPS5623783A (en) Formation of electrode for semiconductor device
EP0517923A4 (en) Method of forming minute resist pattern
JPS5979248A (en) Photosensitive composition
JPS5616129A (en) Pattern forming method
JPS55151338A (en) Fabricating method of semiconductor device
JPS6281027A (en) Fine pattern forming method
JPS55144247A (en) Preparation of photomask
JPS5466768A (en) Forming method of electrode window in semiconductor device
JPS56107241A (en) Dry etching method
JPS55148427A (en) Manufacturing of pattern
JPS57207338A (en) Method for treating resist film for electron beam
Dill PHOTORESIST DEVELOPMENT AS AN ETCHING REACTION
JPS5799738A (en) Charged beam exposure method
JPH0685070B2 (en) Method of developing resist pattern
JPS56114942A (en) High energy beam sensitive resist material and its using method
JPS5666035A (en) Minute processing method
JPS5763829A (en) Pattern forming method
JPS63133626A (en) Manufacture of semiconductor device
JPS55113046A (en) Pattern forming method
JPS574124A (en) Manufacture of germanium semiconductor device
JPS55156329A (en) Manufacture for integrated element
JPS55128831A (en) Method of making photoresist film pattern
JPS56153736A (en) Manufacture of semiconductor device