JPS55141773A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPS55141773A JPS55141773A JP4867079A JP4867079A JPS55141773A JP S55141773 A JPS55141773 A JP S55141773A JP 4867079 A JP4867079 A JP 4867079A JP 4867079 A JP4867079 A JP 4867079A JP S55141773 A JPS55141773 A JP S55141773A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- resonator
- end surfaces
- laser element
- oscillating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4867079A JPS55141773A (en) | 1979-04-20 | 1979-04-20 | Semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4867079A JPS55141773A (en) | 1979-04-20 | 1979-04-20 | Semiconductor laser element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55141773A true JPS55141773A (en) | 1980-11-05 |
Family
ID=12809754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4867079A Pending JPS55141773A (en) | 1979-04-20 | 1979-04-20 | Semiconductor laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55141773A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61288479A (ja) * | 1985-06-14 | 1986-12-18 | Sharp Corp | 半導体レ−ザ装置 |
JPH08236861A (ja) * | 1996-02-13 | 1996-09-13 | Hitachi Ltd | 半導体レーザ素子 |
EP1962395B1 (en) * | 2007-02-26 | 2011-12-07 | Nichia Corporation | Nitride semiconductor laser element |
-
1979
- 1979-04-20 JP JP4867079A patent/JPS55141773A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61288479A (ja) * | 1985-06-14 | 1986-12-18 | Sharp Corp | 半導体レ−ザ装置 |
JPH08236861A (ja) * | 1996-02-13 | 1996-09-13 | Hitachi Ltd | 半導体レーザ素子 |
EP1962395B1 (en) * | 2007-02-26 | 2011-12-07 | Nichia Corporation | Nitride semiconductor laser element |
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