JPS5513426B2 - - Google Patents

Info

Publication number
JPS5513426B2
JPS5513426B2 JP6957674A JP6957674A JPS5513426B2 JP S5513426 B2 JPS5513426 B2 JP S5513426B2 JP 6957674 A JP6957674 A JP 6957674A JP 6957674 A JP6957674 A JP 6957674A JP S5513426 B2 JPS5513426 B2 JP S5513426B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6957674A
Other languages
Japanese (ja)
Other versions
JPS51281A (US06252093-20010626-C00008.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6957674A priority Critical patent/JPS5513426B2/ja
Priority to US05/582,618 priority patent/US4001762A/en
Priority to FR7517458A priority patent/FR2275886A1/fr
Priority to CA228,595A priority patent/CA1009326A/en
Priority to GB24658/75A priority patent/GB1488728A/en
Priority to DE2526429A priority patent/DE2526429C2/de
Priority to IT24479/75A priority patent/IT1039070B/it
Priority to NLAANVRAGE7507280,A priority patent/NL182849C/xx
Publication of JPS51281A publication Critical patent/JPS51281A/ja
Publication of JPS5513426B2 publication Critical patent/JPS5513426B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Conductive Materials (AREA)
  • Silicon Compounds (AREA)
  • Non-Adjustable Resistors (AREA)
JP6957674A 1974-06-18 1974-06-18 Expired JPS5513426B2 (US06252093-20010626-C00008.png)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP6957674A JPS5513426B2 (US06252093-20010626-C00008.png) 1974-06-18 1974-06-18
US05/582,618 US4001762A (en) 1974-06-18 1975-06-02 Thin film resistor
FR7517458A FR2275886A1 (fr) 1974-06-18 1975-06-04 Film resistant mince
CA228,595A CA1009326A (en) 1974-06-18 1975-06-05 Polycrystalline silicon thin film resistors
GB24658/75A GB1488728A (en) 1974-06-18 1975-06-09 Thin film resistors
DE2526429A DE2526429C2 (de) 1974-06-18 1975-06-13 Verfahren zur pyrolytischen Herstellung eines Dünnschichtwiderstands
IT24479/75A IT1039070B (it) 1974-06-18 1975-06-17 Resistore a pellicola sottile
NLAANVRAGE7507280,A NL182849C (nl) 1974-06-18 1975-06-18 Weerstandselement voor een geintegreerde halfgeleiderschakeling omvattende een laagvormig weerstandsgebied van polykristallijn silicium.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6957674A JPS5513426B2 (US06252093-20010626-C00008.png) 1974-06-18 1974-06-18

Publications (2)

Publication Number Publication Date
JPS51281A JPS51281A (US06252093-20010626-C00008.png) 1976-01-05
JPS5513426B2 true JPS5513426B2 (US06252093-20010626-C00008.png) 1980-04-09

Family

ID=13406744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6957674A Expired JPS5513426B2 (US06252093-20010626-C00008.png) 1974-06-18 1974-06-18

Country Status (8)

Country Link
US (1) US4001762A (US06252093-20010626-C00008.png)
JP (1) JPS5513426B2 (US06252093-20010626-C00008.png)
CA (1) CA1009326A (US06252093-20010626-C00008.png)
DE (1) DE2526429C2 (US06252093-20010626-C00008.png)
FR (1) FR2275886A1 (US06252093-20010626-C00008.png)
GB (1) GB1488728A (US06252093-20010626-C00008.png)
IT (1) IT1039070B (US06252093-20010626-C00008.png)
NL (1) NL182849C (US06252093-20010626-C00008.png)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5215262A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacturing method
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
FR2335951A1 (fr) * 1975-12-19 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur a surface passivee et procede d'obtention de la structure de passivation
GB1561983A (en) * 1976-04-07 1980-03-05 Lucas Industries Ltd Polw claw member for a dynamo electric machine rotor
US4167804A (en) * 1976-12-13 1979-09-18 General Motors Corporation Integrated circuit process compatible surge protection resistor
US4133000A (en) * 1976-12-13 1979-01-02 General Motors Corporation Integrated circuit process compatible surge protection resistor
IT1094517B (it) * 1978-04-28 1985-08-02 Componenti Elettronici Sgs Ate Procedimento per la fabbricazione di un elemento resistivo filiforme per circuito integrato
CA1136773A (en) * 1978-08-14 1982-11-30 Norikazu Ohuchi Semiconductor device
US4251876A (en) * 1978-11-03 1981-02-17 Mostek Corporation Extremely low current load device for integrated circuit
US4285001A (en) * 1978-12-26 1981-08-18 Board Of Trustees Of Leland Stanford Jr. University Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material
US4371587A (en) * 1979-12-17 1983-02-01 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition
JPS5749193U (US06252093-20010626-C00008.png) * 1980-09-04 1982-03-19
IT8149780A0 (it) * 1980-12-01 1981-11-27 Hughes Aircraft Co Circuito d'ingresso a modulazionedi porta con resistori al silicio policristallino
US4467312A (en) * 1980-12-23 1984-08-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor resistor device
DE3204054A1 (de) * 1981-02-23 1982-09-09 Intel Corp., Santa Clara, Calif. Widerstand in integrierter schaltungstechnik und verfahren zu dessen herstellung
US4706107A (en) * 1981-06-04 1987-11-10 Nippon Electric Co., Ltd. IC memory cells with reduced alpha particle influence
NL8203323A (nl) * 1982-08-25 1984-03-16 Philips Nv Geintegreerde weerstand.
JPS59138362A (ja) * 1983-01-28 1984-08-08 Nec Corp 半導体装置
US4575923A (en) * 1983-04-06 1986-03-18 North American Philips Corporation Method of manufacturing a high resistance layer having a low temperature coefficient of resistance and semiconductor device having such high resistance layer
JPS61114574A (ja) * 1984-11-09 1986-06-02 Hitachi Ltd 半導体装置
JPS61134055A (ja) * 1984-12-04 1986-06-21 Sony Corp 半導体装置の製造方法
JPH0617957B2 (ja) * 1985-05-15 1994-03-09 セイコー電子工業株式会社 液晶表示装置
GB2182488A (en) * 1985-11-02 1987-05-13 Stc Plc Integrated circuit resistors
US4755480A (en) * 1986-02-03 1988-07-05 Intel Corporation Method of making a silicon nitride resistor using plasma enhanced chemical vapor deposition
GB2186116B (en) * 1986-02-03 1989-11-22 Intel Corp Plasma enhanced chemical vapor deposited vertical resistor
GB2193976B (en) * 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate
JP2816549B2 (ja) * 1986-10-22 1998-10-27 セイコーインスツルメンツ株式会社 電気光学装置
US4690728A (en) * 1986-10-23 1987-09-01 Intel Corporation Pattern delineation of vertical load resistor
US4812419A (en) * 1987-04-30 1989-03-14 Hewlett-Packard Company Via connection with thin resistivity layer
FR2615326B1 (fr) * 1987-05-15 1990-08-31 Fuji Electric Co Ltd Dispositif a semi-conducteurs du type multi-emetteur
US5298785A (en) * 1987-05-15 1994-03-29 Fuji Electric Co., Ltd. Semiconductor device
JPH01143252A (ja) * 1987-11-27 1989-06-05 Nec Corp 半導体装置
US5214497A (en) * 1988-05-25 1993-05-25 Hitachi, Ltd. Polycrystalline silicon resistor for use in a semiconductor integrated circuit having a memory device
US5570119A (en) * 1988-07-26 1996-10-29 Canon Kabushiki Kaisha Multilayer device having integral functional element for use with an ink jet recording apparatus, and recording apparatus
US4992773A (en) * 1988-10-07 1991-02-12 Mos Electronics Corporation Resistor with side wall contact
US5457062A (en) * 1989-06-30 1995-10-10 Texas Instruments Incorporated Method for forming gigaohm load for BiCMOS process
US5045870A (en) * 1990-04-02 1991-09-03 International Business Machines Corporation Thermal ink drop on demand devices on a single chip with vertical integration of driver device
KR940005293B1 (ko) * 1991-05-23 1994-06-15 삼성전자 주식회사 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조
KR940008883B1 (ko) * 1992-04-08 1994-09-28 삼성전자 주식회사 박막저항의 제조방법
US5349325A (en) * 1993-05-18 1994-09-20 Integrated Device Technology, Inc. Multi-layer low modulation polycrystalline semiconductor resistor
US6221760B1 (en) * 1997-10-20 2001-04-24 Nec Corporation Semiconductor device having a silicide structure
JPH10242394A (ja) * 1997-02-27 1998-09-11 Matsushita Electron Corp 半導体装置の製造方法
US7357898B2 (en) * 2003-07-31 2008-04-15 Agency For Science, Technology And Research Microfluidics packages and methods of using same
JP5225549B2 (ja) * 2006-03-15 2013-07-03 日本碍子株式会社 半導体素子
EP3282265B3 (en) * 2016-08-10 2024-03-27 X-FAB Semiconductor Foundries GmbH Semiconductor circuits, devices and methods

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE593931C (de) * 1931-11-24 1934-03-07 Siemens & Halske Akt Ges Verfahren zur Herstellung eines elektrischen Widerstandes mit einer metallischen Siliciumschicht auf isolierendem Traeger
DE618803C (de) * 1933-10-18 1935-09-17 Patra Patent Treuhand Verfahren zur Herstellung von Widerstandskoerpern ohne merkbaren Temperaturkoeffizienten
US3463715A (en) * 1966-07-07 1969-08-26 Trw Inc Method of cathodically sputtering a layer of silicon having a reduced resistivity
US3540871A (en) * 1967-12-15 1970-11-17 Texas Instruments Inc Method for maintaining the uniformity of vapor grown polycrystalline silicon
US3619739A (en) * 1969-01-16 1971-11-09 Signetics Corp Bulk resistor and integrated circuit using the same
US3629667A (en) * 1969-03-14 1971-12-21 Ibm Semiconductor resistor with uniforms current distribution at its contact surface
US3721584A (en) * 1970-04-13 1973-03-20 A Diem Silicon coated substrates and objects fabricated therefrom
US3745647A (en) * 1970-10-07 1973-07-17 Rca Corp Fabrication of semiconductor devices
US3694700A (en) * 1971-02-19 1972-09-26 Nasa Integrated circuit including field effect transistor and cerment resistor
US3806361A (en) * 1972-01-24 1974-04-23 Motorola Inc Method of making electrical contacts for and passivating a semiconductor device
NL7208026A (US06252093-20010626-C00008.png) * 1972-06-13 1973-12-17

Also Published As

Publication number Publication date
NL7507280A (nl) 1975-12-22
US4001762A (en) 1977-01-04
GB1488728A (en) 1977-10-12
DE2526429A1 (de) 1976-01-08
NL182849C (nl) 1988-05-16
JPS51281A (US06252093-20010626-C00008.png) 1976-01-05
FR2275886B1 (US06252093-20010626-C00008.png) 1982-07-16
IT1039070B (it) 1979-12-10
NL182849B (nl) 1987-12-16
FR2275886A1 (fr) 1976-01-16
CA1009326A (en) 1977-04-26
DE2526429C2 (de) 1982-12-23

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