JPS55130173A - Insulated gate field effect transistor - Google Patents

Insulated gate field effect transistor

Info

Publication number
JPS55130173A
JPS55130173A JP3752379A JP3752379A JPS55130173A JP S55130173 A JPS55130173 A JP S55130173A JP 3752379 A JP3752379 A JP 3752379A JP 3752379 A JP3752379 A JP 3752379A JP S55130173 A JPS55130173 A JP S55130173A
Authority
JP
Japan
Prior art keywords
region
diffused
gate
type
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3752379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6152591B2 (cs
Inventor
Kunihiko Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP3752379A priority Critical patent/JPS55130173A/ja
Publication of JPS55130173A publication Critical patent/JPS55130173A/ja
Publication of JPS6152591B2 publication Critical patent/JPS6152591B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/664—Inverted VDMOS transistors, i.e. source-down VDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP3752379A 1979-03-29 1979-03-29 Insulated gate field effect transistor Granted JPS55130173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3752379A JPS55130173A (en) 1979-03-29 1979-03-29 Insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3752379A JPS55130173A (en) 1979-03-29 1979-03-29 Insulated gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS55130173A true JPS55130173A (en) 1980-10-08
JPS6152591B2 JPS6152591B2 (cs) 1986-11-13

Family

ID=12499895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3752379A Granted JPS55130173A (en) 1979-03-29 1979-03-29 Insulated gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS55130173A (cs)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6780713B2 (en) 2001-06-29 2004-08-24 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6806131B2 (en) 2001-06-29 2004-10-19 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6878603B2 (en) 2001-06-29 2005-04-12 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6933215B2 (en) 2001-06-29 2005-08-23 Atmel Germany Gmbh Process for doping a semiconductor body
US7064385B2 (en) 2003-09-19 2006-06-20 Atmel Germany Gmbh DMOS-transistor with lateral dopant gradient in drift region and method of producing the same
CN102637722A (zh) * 2011-02-12 2012-08-15 飞思卡尔半导体公司 半导体器件及相关制作方法
WO2012106833A1 (en) 2011-02-12 2012-08-16 Freescale Semiconductor, Inc. Are Semiconductor device and related fabrication methods
CN103489864A (zh) * 2012-06-13 2014-01-01 株式会社东芝 功率用半导体装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61129699U (cs) * 1985-02-01 1986-08-14

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6780713B2 (en) 2001-06-29 2004-08-24 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6806131B2 (en) 2001-06-29 2004-10-19 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6878603B2 (en) 2001-06-29 2005-04-12 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6933215B2 (en) 2001-06-29 2005-08-23 Atmel Germany Gmbh Process for doping a semiconductor body
US7064385B2 (en) 2003-09-19 2006-06-20 Atmel Germany Gmbh DMOS-transistor with lateral dopant gradient in drift region and method of producing the same
CN102637722A (zh) * 2011-02-12 2012-08-15 飞思卡尔半导体公司 半导体器件及相关制作方法
WO2012106833A1 (en) 2011-02-12 2012-08-16 Freescale Semiconductor, Inc. Are Semiconductor device and related fabrication methods
JP2014508408A (ja) * 2011-02-12 2014-04-03 フリースケール セミコンダクター インコーポレイテッド 半導体装置及び関連する製造方法
TWI557807B (zh) * 2011-02-12 2016-11-11 飛思卡爾半導體公司 半導體裝置及相關製造方法
EP2673806A4 (en) * 2011-02-12 2017-12-06 NXP USA, Inc. Semiconductor device and related fabrication methods
CN103489864A (zh) * 2012-06-13 2014-01-01 株式会社东芝 功率用半导体装置

Also Published As

Publication number Publication date
JPS6152591B2 (cs) 1986-11-13

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