JPS55121668A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55121668A
JPS55121668A JP2970179A JP2970179A JPS55121668A JP S55121668 A JPS55121668 A JP S55121668A JP 2970179 A JP2970179 A JP 2970179A JP 2970179 A JP2970179 A JP 2970179A JP S55121668 A JPS55121668 A JP S55121668A
Authority
JP
Japan
Prior art keywords
layer
phosphorus
psg
opening
aluminum wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2970179A
Other languages
Japanese (ja)
Inventor
Shuji Tabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2970179A priority Critical patent/JPS55121668A/en
Publication of JPS55121668A publication Critical patent/JPS55121668A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To form a surface protective layer having no apprehension of being disconnected in a semiconductor device by lowering the density of phosphorus (P) of the surface of a phosphorus silicate glass (PSG) layer formed on the surface of a semiconductor substrate making contact with aluminum wire whose density is lower than that of phosphorus in the PSG layer itself. CONSTITUTION:A silicon dioxide (SiO2) layer 1 and a PSG layer 2 containing high content of phosphorus (P) are formed sequentially on the surface of a silicon substrate 3, and an opening 7 for leading an electrode is perforated therethrough. Then, this substrate is dipped in a boiled distilled water. Thus, the content of the P in the surface layer 8 is reduced. After an aluminum wire 4 is formed thereon, a PSG layer 5 is formed thereon, and an opening 9 is formed at a bonding pad.
JP2970179A 1979-03-14 1979-03-14 Semiconductor device Pending JPS55121668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2970179A JPS55121668A (en) 1979-03-14 1979-03-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2970179A JPS55121668A (en) 1979-03-14 1979-03-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55121668A true JPS55121668A (en) 1980-09-18

Family

ID=12283410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2970179A Pending JPS55121668A (en) 1979-03-14 1979-03-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55121668A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113162A (en) * 1976-03-19 1977-09-22 Hitachi Ltd Preparation of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113162A (en) * 1976-03-19 1977-09-22 Hitachi Ltd Preparation of semiconductor device

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