JPS55121668A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55121668A JPS55121668A JP2970179A JP2970179A JPS55121668A JP S55121668 A JPS55121668 A JP S55121668A JP 2970179 A JP2970179 A JP 2970179A JP 2970179 A JP2970179 A JP 2970179A JP S55121668 A JPS55121668 A JP S55121668A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- phosphorus
- psg
- opening
- aluminum wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To form a surface protective layer having no apprehension of being disconnected in a semiconductor device by lowering the density of phosphorus (P) of the surface of a phosphorus silicate glass (PSG) layer formed on the surface of a semiconductor substrate making contact with aluminum wire whose density is lower than that of phosphorus in the PSG layer itself. CONSTITUTION:A silicon dioxide (SiO2) layer 1 and a PSG layer 2 containing high content of phosphorus (P) are formed sequentially on the surface of a silicon substrate 3, and an opening 7 for leading an electrode is perforated therethrough. Then, this substrate is dipped in a boiled distilled water. Thus, the content of the P in the surface layer 8 is reduced. After an aluminum wire 4 is formed thereon, a PSG layer 5 is formed thereon, and an opening 9 is formed at a bonding pad.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2970179A JPS55121668A (en) | 1979-03-14 | 1979-03-14 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2970179A JPS55121668A (en) | 1979-03-14 | 1979-03-14 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55121668A true JPS55121668A (en) | 1980-09-18 |
Family
ID=12283410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2970179A Pending JPS55121668A (en) | 1979-03-14 | 1979-03-14 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55121668A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52113162A (en) * | 1976-03-19 | 1977-09-22 | Hitachi Ltd | Preparation of semiconductor device |
-
1979
- 1979-03-14 JP JP2970179A patent/JPS55121668A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52113162A (en) * | 1976-03-19 | 1977-09-22 | Hitachi Ltd | Preparation of semiconductor device |
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