JPS55118673A - Reverse conducting thyristor - Google Patents

Reverse conducting thyristor

Info

Publication number
JPS55118673A
JPS55118673A JP2709279A JP2709279A JPS55118673A JP S55118673 A JPS55118673 A JP S55118673A JP 2709279 A JP2709279 A JP 2709279A JP 2709279 A JP2709279 A JP 2709279A JP S55118673 A JPS55118673 A JP S55118673A
Authority
JP
Japan
Prior art keywords
thyristor
reverse conducting
reverse
diode
reduce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2709279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6348195B2 (enrdf_load_stackoverflow
Inventor
Tsutomu Nakagawa
Akira Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2709279A priority Critical patent/JPS55118673A/ja
Publication of JPS55118673A publication Critical patent/JPS55118673A/ja
Publication of JPS6348195B2 publication Critical patent/JPS6348195B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]

Landscapes

  • Thyristors (AREA)
JP2709279A 1979-03-07 1979-03-07 Reverse conducting thyristor Granted JPS55118673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2709279A JPS55118673A (en) 1979-03-07 1979-03-07 Reverse conducting thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2709279A JPS55118673A (en) 1979-03-07 1979-03-07 Reverse conducting thyristor

Publications (2)

Publication Number Publication Date
JPS55118673A true JPS55118673A (en) 1980-09-11
JPS6348195B2 JPS6348195B2 (enrdf_load_stackoverflow) 1988-09-28

Family

ID=12211426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2709279A Granted JPS55118673A (en) 1979-03-07 1979-03-07 Reverse conducting thyristor

Country Status (1)

Country Link
JP (1) JPS55118673A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0628991A1 (en) * 1993-06-08 1994-12-14 Kabushiki Kaisha Toshiba Semiconductor device having reduced carrier lifetime and method of manufacturing the same
JPH07176720A (ja) * 1993-12-17 1995-07-14 Toyo Electric Mfg Co Ltd 電界緩和分離構造を有する逆導通型サイリスタ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0628991A1 (en) * 1993-06-08 1994-12-14 Kabushiki Kaisha Toshiba Semiconductor device having reduced carrier lifetime and method of manufacturing the same
JPH07176720A (ja) * 1993-12-17 1995-07-14 Toyo Electric Mfg Co Ltd 電界緩和分離構造を有する逆導通型サイリスタ

Also Published As

Publication number Publication date
JPS6348195B2 (enrdf_load_stackoverflow) 1988-09-28

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