JPS55117239A - Making method of microminiature pattern - Google Patents
Making method of microminiature patternInfo
- Publication number
- JPS55117239A JPS55117239A JP2428579A JP2428579A JPS55117239A JP S55117239 A JPS55117239 A JP S55117239A JP 2428579 A JP2428579 A JP 2428579A JP 2428579 A JP2428579 A JP 2428579A JP S55117239 A JPS55117239 A JP S55117239A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- resist
- linking
- rays
- cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004132 cross linking Methods 0.000 abstract 3
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 abstract 3
- 229920001577 copolymer Polymers 0.000 abstract 2
- 125000000524 functional group Chemical group 0.000 abstract 2
- 239000000178 monomer Substances 0.000 abstract 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 abstract 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 abstract 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 abstract 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2428579A JPS55117239A (en) | 1979-03-02 | 1979-03-02 | Making method of microminiature pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2428579A JPS55117239A (en) | 1979-03-02 | 1979-03-02 | Making method of microminiature pattern |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55117239A true JPS55117239A (en) | 1980-09-09 |
JPS5720615B2 JPS5720615B2 (ja) | 1982-04-30 |
Family
ID=12133903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2428579A Granted JPS55117239A (en) | 1979-03-02 | 1979-03-02 | Making method of microminiature pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55117239A (ja) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49103632A (ja) * | 1972-12-21 | 1974-10-01 | Philips Nv | |
JPS51105353A (ja) * | 1975-03-07 | 1976-09-17 | Hitachi Ltd | Denshisenkannoseikobunshisoseibutsu |
JPS52153672A (en) * | 1976-06-16 | 1977-12-20 | Matsushita Electric Ind Co Ltd | Electron beam resist and its usage |
JPS5344441A (en) * | 1976-10-04 | 1978-04-21 | Ibm | Material for resist |
JPS5353314A (en) * | 1976-10-26 | 1978-05-15 | Agency Of Ind Science & Technol | Sensitive high polymer composition and picture imae forming method usingsaid composition |
JPS5466122A (en) * | 1977-11-07 | 1979-05-28 | Fujitsu Ltd | Pattern formation material |
JPS5466829A (en) * | 1977-11-07 | 1979-05-29 | Fujitsu Ltd | Pattern formation materil |
JPS5466776A (en) * | 1977-11-07 | 1979-05-29 | Fujitsu Ltd | Fine pattern forming method |
-
1979
- 1979-03-02 JP JP2428579A patent/JPS55117239A/ja active Granted
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49103632A (ja) * | 1972-12-21 | 1974-10-01 | Philips Nv | |
JPS51105353A (ja) * | 1975-03-07 | 1976-09-17 | Hitachi Ltd | Denshisenkannoseikobunshisoseibutsu |
JPS52153672A (en) * | 1976-06-16 | 1977-12-20 | Matsushita Electric Ind Co Ltd | Electron beam resist and its usage |
JPS5344441A (en) * | 1976-10-04 | 1978-04-21 | Ibm | Material for resist |
JPS5353314A (en) * | 1976-10-26 | 1978-05-15 | Agency Of Ind Science & Technol | Sensitive high polymer composition and picture imae forming method usingsaid composition |
JPS5466122A (en) * | 1977-11-07 | 1979-05-28 | Fujitsu Ltd | Pattern formation material |
JPS5466829A (en) * | 1977-11-07 | 1979-05-29 | Fujitsu Ltd | Pattern formation materil |
JPS5466776A (en) * | 1977-11-07 | 1979-05-29 | Fujitsu Ltd | Fine pattern forming method |
Also Published As
Publication number | Publication date |
---|---|
JPS5720615B2 (ja) | 1982-04-30 |
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