JPS55117239A - Making method of microminiature pattern - Google Patents

Making method of microminiature pattern

Info

Publication number
JPS55117239A
JPS55117239A JP2428579A JP2428579A JPS55117239A JP S55117239 A JPS55117239 A JP S55117239A JP 2428579 A JP2428579 A JP 2428579A JP 2428579 A JP2428579 A JP 2428579A JP S55117239 A JPS55117239 A JP S55117239A
Authority
JP
Japan
Prior art keywords
pattern
resist
linking
rays
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2428579A
Other languages
English (en)
Other versions
JPS5720615B2 (ja
Inventor
Tateo Kitamura
Yasuhiro Yoneda
Jiro Naito
Toshisuke Kitakoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2428579A priority Critical patent/JPS55117239A/ja
Publication of JPS55117239A publication Critical patent/JPS55117239A/ja
Publication of JPS5720615B2 publication Critical patent/JPS5720615B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
JP2428579A 1979-03-02 1979-03-02 Making method of microminiature pattern Granted JPS55117239A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2428579A JPS55117239A (en) 1979-03-02 1979-03-02 Making method of microminiature pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2428579A JPS55117239A (en) 1979-03-02 1979-03-02 Making method of microminiature pattern

Publications (2)

Publication Number Publication Date
JPS55117239A true JPS55117239A (en) 1980-09-09
JPS5720615B2 JPS5720615B2 (ja) 1982-04-30

Family

ID=12133903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2428579A Granted JPS55117239A (en) 1979-03-02 1979-03-02 Making method of microminiature pattern

Country Status (1)

Country Link
JP (1) JPS55117239A (ja)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49103632A (ja) * 1972-12-21 1974-10-01 Philips Nv
JPS51105353A (ja) * 1975-03-07 1976-09-17 Hitachi Ltd Denshisenkannoseikobunshisoseibutsu
JPS52153672A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Electron beam resist and its usage
JPS5344441A (en) * 1976-10-04 1978-04-21 Ibm Material for resist
JPS5353314A (en) * 1976-10-26 1978-05-15 Agency Of Ind Science & Technol Sensitive high polymer composition and picture imae forming method usingsaid composition
JPS5466122A (en) * 1977-11-07 1979-05-28 Fujitsu Ltd Pattern formation material
JPS5466829A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Pattern formation materil
JPS5466776A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Fine pattern forming method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49103632A (ja) * 1972-12-21 1974-10-01 Philips Nv
JPS51105353A (ja) * 1975-03-07 1976-09-17 Hitachi Ltd Denshisenkannoseikobunshisoseibutsu
JPS52153672A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Electron beam resist and its usage
JPS5344441A (en) * 1976-10-04 1978-04-21 Ibm Material for resist
JPS5353314A (en) * 1976-10-26 1978-05-15 Agency Of Ind Science & Technol Sensitive high polymer composition and picture imae forming method usingsaid composition
JPS5466122A (en) * 1977-11-07 1979-05-28 Fujitsu Ltd Pattern formation material
JPS5466829A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Pattern formation materil
JPS5466776A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Fine pattern forming method

Also Published As

Publication number Publication date
JPS5720615B2 (ja) 1982-04-30

Similar Documents

Publication Publication Date Title
JPS561536A (en) Manufacture of resist pattern
JPS5427369A (en) Pattern formation method
JPS55117239A (en) Making method of microminiature pattern
JPS5466122A (en) Pattern formation material
JPS5330330A (en) Developing liquid for radiant ray resist
JPS5381116A (en) Radiation sensitive polymer and its working method
JPS5639539A (en) Pattern forming method
JPS5353314A (en) Sensitive high polymer composition and picture imae forming method usingsaid composition
JPS51130222A (en) A process for producing an electron beam resist image
JPS5541785A (en) Pattern exposing method
JPS5669625A (en) Minute pattern forming method
JPS56125833A (en) Exposing method for electron beam
JPS5215267A (en) Fine processing method
JPS5655943A (en) Pattern forming method
JPS57173832A (en) Formation of resist image
JPS5442979A (en) Electron beam exposure device
JPS53114676A (en) Electron beam exposure method
JPS5552051A (en) Radiation resist and formation method for radiation resist pattern
JPS55133042A (en) Pattern forming method
JPS56114943A (en) Negative type resist material for electron beam
JPS5732444A (en) Formation of resist pattern
JPS56114942A (en) High energy beam sensitive resist material and its using method
JPS55113048A (en) Image forming method
JPS56137348A (en) Negative type ionized radiation sensitive resist
JPS5786832A (en) Pattern forming material