JPS57173832A - Formation of resist image - Google Patents

Formation of resist image

Info

Publication number
JPS57173832A
JPS57173832A JP5921781A JP5921781A JPS57173832A JP S57173832 A JPS57173832 A JP S57173832A JP 5921781 A JP5921781 A JP 5921781A JP 5921781 A JP5921781 A JP 5921781A JP S57173832 A JPS57173832 A JP S57173832A
Authority
JP
Japan
Prior art keywords
butanone
copolymer
radiation
developing solution
chloroacrylate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5921781A
Other languages
Japanese (ja)
Inventor
Tsukasa Tada
Akira Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5921781A priority Critical patent/JPS57173832A/en
Priority to CA000400774A priority patent/CA1164261A/en
Priority to US06/367,921 priority patent/US4454222A/en
Priority to EP82103370A priority patent/EP0064222B1/en
Priority to DE8282103370T priority patent/DE3269563D1/en
Publication of JPS57173832A publication Critical patent/JPS57173832A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a pattern having a small number of microscopic defects in a short time, by coating a specified radiation resist containing halogen on a substrate, irradiating it with radiation, and processing it with a developing solution containing butanone. CONSTITUTION:A homopolymer of a monomer represented by the formula and/ or a copolymer of this monomer and another vinyl monomer is coated on a substrate, a desired part of it is irradiated with radiation, and said polymer or copolymer is processed with a developing solution containing 2-butanone or 2- methyl-3-butanone. As the usable positive type radiation resist, polytrifluoroethyl alpha-chloroacrylate, a copolymer of trifluoroethyl alpha-chloroacrylate and t-butyl methacrylate, etc. are embodied. As the developing solution, a mixture of 2-butanone and 2-heptanone, a mixture of 2-butanone and 3-methyl-5-hexanone, etc. are exemplified.
JP5921781A 1981-04-21 1981-04-21 Formation of resist image Pending JPS57173832A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP5921781A JPS57173832A (en) 1981-04-21 1981-04-21 Formation of resist image
CA000400774A CA1164261A (en) 1981-04-21 1982-04-08 PROCESS FOR FORMING RESIST PATTERNS BY DEVELOPING A POLYMER CONTAINING TRIFLUOROETHYL-.alpha.- CHLOROCRYLATE UNITS WITH SPECIFIC KETONE COMPOUNDS
US06/367,921 US4454222A (en) 1981-04-21 1982-04-13 Process for forming resist patterns using mixed ketone developers
EP82103370A EP0064222B1 (en) 1981-04-21 1982-04-21 Process for forming resist patterns
DE8282103370T DE3269563D1 (en) 1981-04-21 1982-04-21 Process for forming resist patterns

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5921781A JPS57173832A (en) 1981-04-21 1981-04-21 Formation of resist image

Publications (1)

Publication Number Publication Date
JPS57173832A true JPS57173832A (en) 1982-10-26

Family

ID=13106990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5921781A Pending JPS57173832A (en) 1981-04-21 1981-04-21 Formation of resist image

Country Status (1)

Country Link
JP (1) JPS57173832A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2363749A3 (en) * 2010-03-05 2011-11-02 Rohm and Haas Electronic Materials, L.L.C. Methods of forming photolithographic patterns
US8975001B2 (en) 2011-02-28 2015-03-10 Rohm And Haas Electronics Materials Llc Photoresist compositions and methods of forming photolithographic patterns
US8980536B2 (en) 2011-02-28 2015-03-17 Rohm And Haas Electronic Materials Llc Developer compositions and methods of forming photolithographic patterns

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2363749A3 (en) * 2010-03-05 2011-11-02 Rohm and Haas Electronic Materials, L.L.C. Methods of forming photolithographic patterns
US8778601B2 (en) 2010-03-05 2014-07-15 Rohm and Haas Electronic Materials Methods of forming photolithographic patterns
US8975001B2 (en) 2011-02-28 2015-03-10 Rohm And Haas Electronics Materials Llc Photoresist compositions and methods of forming photolithographic patterns
US8980536B2 (en) 2011-02-28 2015-03-17 Rohm And Haas Electronic Materials Llc Developer compositions and methods of forming photolithographic patterns

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