JPS55117234A - Manufacturing semiconductor device - Google Patents

Manufacturing semiconductor device

Info

Publication number
JPS55117234A
JPS55117234A JP2376879A JP2376879A JPS55117234A JP S55117234 A JPS55117234 A JP S55117234A JP 2376879 A JP2376879 A JP 2376879A JP 2376879 A JP2376879 A JP 2376879A JP S55117234 A JPS55117234 A JP S55117234A
Authority
JP
Japan
Prior art keywords
substrate
layer
type
diffuse
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2376879A
Other languages
English (en)
Japanese (ja)
Other versions
JPH022287B2 (enExample
Inventor
Shoji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2376879A priority Critical patent/JPS55117234A/ja
Publication of JPS55117234A publication Critical patent/JPS55117234A/ja
Publication of JPH022287B2 publication Critical patent/JPH022287B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/18—Diffusion lifetime killers

Landscapes

  • Formation Of Insulating Films (AREA)
JP2376879A 1979-03-01 1979-03-01 Manufacturing semiconductor device Granted JPS55117234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2376879A JPS55117234A (en) 1979-03-01 1979-03-01 Manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2376879A JPS55117234A (en) 1979-03-01 1979-03-01 Manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS55117234A true JPS55117234A (en) 1980-09-09
JPH022287B2 JPH022287B2 (enExample) 1990-01-17

Family

ID=12119516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2376879A Granted JPS55117234A (en) 1979-03-01 1979-03-01 Manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS55117234A (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51102556A (enExample) * 1975-03-07 1976-09-10 Hitachi Ltd
JPS522181A (en) * 1975-06-23 1977-01-08 Fuji Electric Co Ltd Method of fabricating thyristor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51102556A (enExample) * 1975-03-07 1976-09-10 Hitachi Ltd
JPS522181A (en) * 1975-06-23 1977-01-08 Fuji Electric Co Ltd Method of fabricating thyristor

Also Published As

Publication number Publication date
JPH022287B2 (enExample) 1990-01-17

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