JPS55111177A - Method of manufacturing field-effect transistor - Google Patents
Method of manufacturing field-effect transistorInfo
- Publication number
- JPS55111177A JPS55111177A JP1917779A JP1917779A JPS55111177A JP S55111177 A JPS55111177 A JP S55111177A JP 1917779 A JP1917779 A JP 1917779A JP 1917779 A JP1917779 A JP 1917779A JP S55111177 A JPS55111177 A JP S55111177A
- Authority
- JP
- Japan
- Prior art keywords
- film
- coated
- gate
- distance
- photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1917779A JPS55111177A (en) | 1979-02-20 | 1979-02-20 | Method of manufacturing field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1917779A JPS55111177A (en) | 1979-02-20 | 1979-02-20 | Method of manufacturing field-effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55111177A true JPS55111177A (en) | 1980-08-27 |
| JPS621271B2 JPS621271B2 (enrdf_load_stackoverflow) | 1987-01-12 |
Family
ID=11992059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1917779A Granted JPS55111177A (en) | 1979-02-20 | 1979-02-20 | Method of manufacturing field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55111177A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09106387A (ja) * | 1995-10-09 | 1997-04-22 | Hozumi Nishie | 入力数値の指示具付電子式卓上計算機 |
-
1979
- 1979-02-20 JP JP1917779A patent/JPS55111177A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS621271B2 (enrdf_load_stackoverflow) | 1987-01-12 |
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