JPS55110074A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS55110074A
JPS55110074A JP1728979A JP1728979A JPS55110074A JP S55110074 A JPS55110074 A JP S55110074A JP 1728979 A JP1728979 A JP 1728979A JP 1728979 A JP1728979 A JP 1728979A JP S55110074 A JPS55110074 A JP S55110074A
Authority
JP
Japan
Prior art keywords
layer
voltage
thickness
less
small
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1728979A
Other languages
Japanese (ja)
Other versions
JPS611909B2 (en
Inventor
Masami Naito
Takahiro Nagano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1728979A priority Critical patent/JPS55110074A/en
Publication of JPS55110074A publication Critical patent/JPS55110074A/en
Publication of JPS611909B2 publication Critical patent/JPS611909B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To lower the ON-voltage of the SCR by the method wherein, of the impressed voltage of the pn junction and the voltage drop in the intermediate layer, which are mutually in an inverse relation, the former is made small without remarkably increasing the latter, and further the voltage drop of the emitter layer is made small. CONSTITUTION:An nB-layer is made n-type Si substrate, and pB-layer and nE- layer are formed. B-doped poly-Si layer 4 is piled on the other surface, and by operating heat diffusion, pE-layer of thickness tE is formed. At this time, the sum of the thicknesses of intermediate nB-layer and pB-layer is set at 400mum or less, and the total amount of impurity of pE-layer is made smaller than that of nE-layer, 3X10<14>atoms/cm<2> or less. When the thickness tE is made sufficiently small and Q is set at 2X10<13>/cm<2> or less, the reproducibility of SCR characteristics is good. Also, the thickness is selected at tE<=1.7X10<-5>Q<0.4>(2.9X10<-5>Q<0.4> when the emitter layer is n-type). By this structure, it is possible to decrease the impressed voltage VJ on the pn junction and make VJ+VB small without remarkably increasing the voltage drop VB of the intermediate base layer and also to lower the On-voltage without increasing VE.
JP1728979A 1979-02-19 1979-02-19 Thyristor Granted JPS55110074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1728979A JPS55110074A (en) 1979-02-19 1979-02-19 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1728979A JPS55110074A (en) 1979-02-19 1979-02-19 Thyristor

Publications (2)

Publication Number Publication Date
JPS55110074A true JPS55110074A (en) 1980-08-25
JPS611909B2 JPS611909B2 (en) 1986-01-21

Family

ID=11939818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1728979A Granted JPS55110074A (en) 1979-02-19 1979-02-19 Thyristor

Country Status (1)

Country Link
JP (1) JPS55110074A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62117370A (en) * 1985-11-15 1987-05-28 Semiconductor Res Found Manufacture of double-gate electrostatic induction thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62117370A (en) * 1985-11-15 1987-05-28 Semiconductor Res Found Manufacture of double-gate electrostatic induction thyristor
JPH0257348B2 (en) * 1985-11-15 1990-12-04 Handotai Kenkyu Shinkokai

Also Published As

Publication number Publication date
JPS611909B2 (en) 1986-01-21

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