JPS55110037A - Method for making semiconductor device - Google Patents

Method for making semiconductor device

Info

Publication number
JPS55110037A
JPS55110037A JP1811679A JP1811679A JPS55110037A JP S55110037 A JPS55110037 A JP S55110037A JP 1811679 A JP1811679 A JP 1811679A JP 1811679 A JP1811679 A JP 1811679A JP S55110037 A JPS55110037 A JP S55110037A
Authority
JP
Japan
Prior art keywords
film
substrate
atom
injected
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1811679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6112374B2 (enrdf_load_stackoverflow
Inventor
Haruo Shimoda
Kaoru Ikegami
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1811679A priority Critical patent/JPS55110037A/ja
Publication of JPS55110037A publication Critical patent/JPS55110037A/ja
Publication of JPS6112374B2 publication Critical patent/JPS6112374B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
JP1811679A 1979-02-19 1979-02-19 Method for making semiconductor device Granted JPS55110037A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1811679A JPS55110037A (en) 1979-02-19 1979-02-19 Method for making semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1811679A JPS55110037A (en) 1979-02-19 1979-02-19 Method for making semiconductor device

Publications (2)

Publication Number Publication Date
JPS55110037A true JPS55110037A (en) 1980-08-25
JPS6112374B2 JPS6112374B2 (enrdf_load_stackoverflow) 1986-04-08

Family

ID=11962632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1811679A Granted JPS55110037A (en) 1979-02-19 1979-02-19 Method for making semiconductor device

Country Status (1)

Country Link
JP (1) JPS55110037A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756970A (en) * 1980-09-22 1982-04-05 Oki Electric Ind Co Ltd Manufacture of insulated gate type field effect semiconductor device
JPS5864034A (ja) * 1981-10-13 1983-04-16 Mitsubishi Electric Corp シリコン窒化膜の形成方法
JPH02186632A (ja) * 1989-01-12 1990-07-20 Nec Corp 絶縁膜の製造方法
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756970A (en) * 1980-09-22 1982-04-05 Oki Electric Ind Co Ltd Manufacture of insulated gate type field effect semiconductor device
JPS5864034A (ja) * 1981-10-13 1983-04-16 Mitsubishi Electric Corp シリコン窒化膜の形成方法
JPH02186632A (ja) * 1989-01-12 1990-07-20 Nec Corp 絶縁膜の製造方法
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices

Also Published As

Publication number Publication date
JPS6112374B2 (enrdf_load_stackoverflow) 1986-04-08

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