JPS55105349A - Integrated-circuit device - Google Patents

Integrated-circuit device

Info

Publication number
JPS55105349A
JPS55105349A JP698980A JP698980A JPS55105349A JP S55105349 A JPS55105349 A JP S55105349A JP 698980 A JP698980 A JP 698980A JP 698980 A JP698980 A JP 698980A JP S55105349 A JPS55105349 A JP S55105349A
Authority
JP
Japan
Prior art keywords
region
film
layer
layers
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP698980A
Other languages
Japanese (ja)
Inventor
Masaru Watanabe
Yoshihisa Shioashi
Kazuyuki Uchida
Shuichi Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP698980A priority Critical patent/JPS55105349A/en
Publication of JPS55105349A publication Critical patent/JPS55105349A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To prevent the lateral expansion of a region and to eliminate the misalignment of wiring layers to be provided on the region, by reducing the film of a region, wherein diffusion or ion implantation is made, among the insulating films deposited on a semiconductor substrate.
CONSTITUTION: An SiO2 film 22 is deposited on a semiconductor substrate 21. The region wherein a diffused layer is formed is etched to form a thin film 221 and the thickness of the other region is remained as a thick film 222. Then, in order to form a diffusing layer 24 for connection which will become the underlay for polycrystalline Si layers 26 and 27, which will be formed later, a mask 23 of a resist film having a specified hole is provided, and the layer 24 is formed by diffusion. In this way, the layer 24 does not expand in the lateral direction. Thereafter, the mask 23 is removed, the polycrystalline layers 26 and 27 which are to become wiring layers are grown, and a source region 28, a drain region 29, and a wiring region 30 are formed by ion implantation. Then, all the surface is covered by an SiO2 film 31 which is stacked on the films 221 and 222, a window 32 is opened, and Al electrode 33 is attached.
COPYRIGHT: (C)1980,JPO&Japio
JP698980A 1980-01-25 1980-01-25 Integrated-circuit device Pending JPS55105349A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP698980A JPS55105349A (en) 1980-01-25 1980-01-25 Integrated-circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP698980A JPS55105349A (en) 1980-01-25 1980-01-25 Integrated-circuit device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9808273A Division JPS5525502B2 (en) 1973-08-31 1973-08-31

Publications (1)

Publication Number Publication Date
JPS55105349A true JPS55105349A (en) 1980-08-12

Family

ID=11653548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP698980A Pending JPS55105349A (en) 1980-01-25 1980-01-25 Integrated-circuit device

Country Status (1)

Country Link
JP (1) JPS55105349A (en)

Similar Documents

Publication Publication Date Title
JPS5555559A (en) Method of fabricating semiconductor device
JPS5444481A (en) Mos type semiconductor device and its manufacture
JPS54108582A (en) Manufacture of silicon type field effect transistor
JPS55105349A (en) Integrated-circuit device
JPS6457717A (en) Manufacture of semiconductor device
JPS5583267A (en) Method of fabricating semiconductor device
JPS56125875A (en) Semiconductor integrated circuit device
JPS559415A (en) Semiconductor manufacturing method
JPS54109783A (en) Manufacture of semiconductor device
JPS54161889A (en) Insulated gate type field effect transistor
JPS5451383A (en) Production of semiconductor element
JPS56126957A (en) Manufacture of semiconductor device
JPS5533051A (en) Manufacture of semiconductor device
JPS571243A (en) Manufacture of semiconductor device
JPS57180144A (en) Manufacture of semiconductor device
JPS56165339A (en) Semiconductor device
JPS5575235A (en) Method of fabricating semiconductor device
JPS56158446A (en) Manufacture of semiconductor integrated circuit
JPS54104782A (en) Mos type semiconductor device
JPS5596652A (en) Method of fabricating semiconductor device
JPS6465851A (en) Manufacture of semiconductor device
JPS5796524A (en) Manufacture of semiconductor device
JPS57211727A (en) Manufacture of semiconductor device
JPS54140883A (en) Semiconductor device
JPS5562750A (en) Semiconductor integrated circuit device