JPS55105331A - Method for forming electronic-beam resist pattern on electrical insulating material - Google Patents
Method for forming electronic-beam resist pattern on electrical insulating materialInfo
- Publication number
- JPS55105331A JPS55105331A JP1356379A JP1356379A JPS55105331A JP S55105331 A JPS55105331 A JP S55105331A JP 1356379 A JP1356379 A JP 1356379A JP 1356379 A JP1356379 A JP 1356379A JP S55105331 A JPS55105331 A JP S55105331A
- Authority
- JP
- Japan
- Prior art keywords
- thickness
- film
- layer
- electron
- resist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011810 insulating material Substances 0.000 title abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004372 Polyvinyl alcohol Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000006116 polymerization reaction Methods 0.000 abstract 1
- 229920002451 polyvinyl alcohol Polymers 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 238000012216 screening Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1356379A JPS55105331A (en) | 1979-02-08 | 1979-02-08 | Method for forming electronic-beam resist pattern on electrical insulating material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1356379A JPS55105331A (en) | 1979-02-08 | 1979-02-08 | Method for forming electronic-beam resist pattern on electrical insulating material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55105331A true JPS55105331A (en) | 1980-08-12 |
| JPS6151414B2 JPS6151414B2 (en, 2012) | 1986-11-08 |
Family
ID=11836632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1356379A Granted JPS55105331A (en) | 1979-02-08 | 1979-02-08 | Method for forming electronic-beam resist pattern on electrical insulating material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55105331A (en, 2012) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074521A (ja) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | パタ−ン形成方法 |
| CN111320164A (zh) * | 2020-02-28 | 2020-06-23 | 南方科技大学 | 一种悬空石墨烯结构的制备方法及由其得到的悬空石墨烯结构和应用 |
-
1979
- 1979-02-08 JP JP1356379A patent/JPS55105331A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074521A (ja) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | パタ−ン形成方法 |
| CN111320164A (zh) * | 2020-02-28 | 2020-06-23 | 南方科技大学 | 一种悬空石墨烯结构的制备方法及由其得到的悬空石墨烯结构和应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6151414B2 (en, 2012) | 1986-11-08 |
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