JPS55105326A - Manufacturing method of electrode of semiconductor device - Google Patents

Manufacturing method of electrode of semiconductor device

Info

Publication number
JPS55105326A
JPS55105326A JP1371179A JP1371179A JPS55105326A JP S55105326 A JPS55105326 A JP S55105326A JP 1371179 A JP1371179 A JP 1371179A JP 1371179 A JP1371179 A JP 1371179A JP S55105326 A JPS55105326 A JP S55105326A
Authority
JP
Japan
Prior art keywords
electron beam
films
electrode
exposition
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1371179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6216534B2 (enrdf_load_stackoverflow
Inventor
Yoshihiro Todokoro
Setsuko Takeda
Yoshihisa Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP1371179A priority Critical patent/JPS55105326A/ja
Publication of JPS55105326A publication Critical patent/JPS55105326A/ja
Publication of JPS6216534B2 publication Critical patent/JPS6216534B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Electron Beam Exposure (AREA)
  • Junction Field-Effect Transistors (AREA)
JP1371179A 1979-02-07 1979-02-07 Manufacturing method of electrode of semiconductor device Granted JPS55105326A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1371179A JPS55105326A (en) 1979-02-07 1979-02-07 Manufacturing method of electrode of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1371179A JPS55105326A (en) 1979-02-07 1979-02-07 Manufacturing method of electrode of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55105326A true JPS55105326A (en) 1980-08-12
JPS6216534B2 JPS6216534B2 (enrdf_load_stackoverflow) 1987-04-13

Family

ID=11840809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1371179A Granted JPS55105326A (en) 1979-02-07 1979-02-07 Manufacturing method of electrode of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55105326A (enrdf_load_stackoverflow)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5646536A (en) * 1979-09-22 1981-04-27 Nippon Telegr & Teleph Corp <Ntt> Formation of microminiature electrode
JPS5814577A (ja) * 1981-07-17 1983-01-27 Fujitsu Ltd 電界効果型半導体装置の製造方法
JPS58153375A (ja) * 1982-03-08 1983-09-12 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS58199567A (ja) * 1982-05-17 1983-11-19 Toshiba Corp シヨツトキ障壁型電界効果トランジスタ及びその製造方法
JPS60145673A (ja) * 1984-01-09 1985-08-01 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6177370A (ja) * 1984-09-21 1986-04-19 Fujitsu Ltd パタ−ン形成方法
JPS61104675A (ja) * 1984-10-29 1986-05-22 Fujitsu Ltd 半導体装置の製造方法
JPS61125176A (ja) * 1984-11-22 1986-06-12 Nec Corp 半導体装置の製造方法
JPH01133375A (ja) * 1987-09-23 1989-05-25 Siemens Ag 自己整合ゲートを備えるｍｅｓｆｅｔの製造方法
JPH02208932A (ja) * 1989-02-08 1990-08-20 Mitsubishi Electric Corp パターン形成方法
JPH0319244A (ja) * 1989-06-15 1991-01-28 Matsushita Electron Corp 半導体装置の製造方法
JPH03185739A (ja) * 1989-12-01 1991-08-13 Hughes Aircraft Co 自己整列ｔゲートｈｅｍｔ
JPH05211171A (ja) * 1990-03-12 1993-08-20 Electron & Telecommun Res Inst ガリウム砒素半導体素子の製造方法
JPH07335671A (ja) * 1994-06-13 1995-12-22 Nec Corp Ｔ型ゲート電極の作製方法
JPH08186128A (ja) * 1994-12-19 1996-07-16 Korea Electron Telecommun 電界効果トランジスタのゲート形成方法
JP2007525029A (ja) * 2004-02-23 2007-08-30 エーエスエムエル ネザーランズ ビー．ブイ． デバイス製造方法および基板

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5646536A (en) * 1979-09-22 1981-04-27 Nippon Telegr & Teleph Corp <Ntt> Formation of microminiature electrode
JPS5814577A (ja) * 1981-07-17 1983-01-27 Fujitsu Ltd 電界効果型半導体装置の製造方法
JPS58153375A (ja) * 1982-03-08 1983-09-12 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS58199567A (ja) * 1982-05-17 1983-11-19 Toshiba Corp シヨツトキ障壁型電界効果トランジスタ及びその製造方法
JPS60145673A (ja) * 1984-01-09 1985-08-01 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6177370A (ja) * 1984-09-21 1986-04-19 Fujitsu Ltd パタ−ン形成方法
JPS61104675A (ja) * 1984-10-29 1986-05-22 Fujitsu Ltd 半導体装置の製造方法
JPS61125176A (ja) * 1984-11-22 1986-06-12 Nec Corp 半導体装置の製造方法
JPH01133375A (ja) * 1987-09-23 1989-05-25 Siemens Ag 自己整合ゲートを備えるｍｅｓｆｅｔの製造方法
JPH02208932A (ja) * 1989-02-08 1990-08-20 Mitsubishi Electric Corp パターン形成方法
JPH0319244A (ja) * 1989-06-15 1991-01-28 Matsushita Electron Corp 半導体装置の製造方法
JPH03185739A (ja) * 1989-12-01 1991-08-13 Hughes Aircraft Co 自己整列ｔゲートｈｅｍｔ
JPH05211171A (ja) * 1990-03-12 1993-08-20 Electron & Telecommun Res Inst ガリウム砒素半導体素子の製造方法
JPH07335671A (ja) * 1994-06-13 1995-12-22 Nec Corp Ｔ型ゲート電極の作製方法
JPH08186128A (ja) * 1994-12-19 1996-07-16 Korea Electron Telecommun 電界効果トランジスタのゲート形成方法
JP2007525029A (ja) * 2004-02-23 2007-08-30 エーエスエムエル ネザーランズ ビー．ブイ． デバイス製造方法および基板

Also Published As

Publication number Publication date
JPS6216534B2 (enrdf_load_stackoverflow) 1987-04-13

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