JPS5473574A - Transfer mask and production of the same - Google Patents

Transfer mask and production of the same

Info

Publication number
JPS5473574A
JPS5473574A JP14122177A JP14122177A JPS5473574A JP S5473574 A JPS5473574 A JP S5473574A JP 14122177 A JP14122177 A JP 14122177A JP 14122177 A JP14122177 A JP 14122177A JP S5473574 A JPS5473574 A JP S5473574A
Authority
JP
Japan
Prior art keywords
film
composite films
reinforced
holes
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14122177A
Other languages
Japanese (ja)
Inventor
Yasuo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14122177A priority Critical patent/JPS5473574A/en
Publication of JPS5473574A publication Critical patent/JPS5473574A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To make a transfer mask by forming a non-transmittable film with the composite films of a resin improved and reinforced through ion implantation and a metal and forming through-holes therein.
CONSTITUTION: A positive type resist film is coated n a glass substrate and is dipped in water. When it is scooped up with a backing 201 made of Si and is baked to tighten, then the high polymer resin film becomes tense. Next, X-rays or electron beams are radiated and are developed. For example, if the film 202 is made of polymethyl methacrylate, the radiated portions dissolve well in a solvent to produce through-holes, which become ideal transmission regions. When a Pt film 203 is evaporated about 1000 to 7000 Å on the non-transmission regions from the backing side, then the firm composite films are formed. When Ar, B, P are implanted more than 3 × 1014 cm-2 at above 100 kev from above after this, the film 204 is improved and reinforced to evenly shrink, thus the strength of the composite films is also intensified. In this way, the mask with nothing in the light transmission parts is formed.
COPYRIGHT: (C)1979,JPO&Japio
JP14122177A 1977-11-24 1977-11-24 Transfer mask and production of the same Pending JPS5473574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14122177A JPS5473574A (en) 1977-11-24 1977-11-24 Transfer mask and production of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14122177A JPS5473574A (en) 1977-11-24 1977-11-24 Transfer mask and production of the same

Publications (1)

Publication Number Publication Date
JPS5473574A true JPS5473574A (en) 1979-06-12

Family

ID=15286934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14122177A Pending JPS5473574A (en) 1977-11-24 1977-11-24 Transfer mask and production of the same

Country Status (1)

Country Link
JP (1) JPS5473574A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683941A (en) * 1979-11-13 1981-07-08 Perkin Elmer Corp Method of forming arbitrary stationary thin film for manufacturing lithographic mask
JPS572524A (en) * 1980-05-07 1982-01-07 Perkin Elmer Corp Method of manufacturing mask substrate used in x-ray lithography
JPS59184526A (en) * 1983-04-05 1984-10-19 Agency Of Ind Science & Technol Formation of pattern
JPS6132426A (en) * 1984-07-16 1986-02-15 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション Method of reversing transparent mask

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683941A (en) * 1979-11-13 1981-07-08 Perkin Elmer Corp Method of forming arbitrary stationary thin film for manufacturing lithographic mask
JPH0142133B2 (en) * 1979-11-13 1989-09-11 Perkin Elmer Corp
JPS572524A (en) * 1980-05-07 1982-01-07 Perkin Elmer Corp Method of manufacturing mask substrate used in x-ray lithography
JPS59184526A (en) * 1983-04-05 1984-10-19 Agency Of Ind Science & Technol Formation of pattern
JPS6132426A (en) * 1984-07-16 1986-02-15 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション Method of reversing transparent mask

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