JPS5492186A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5492186A
JPS5492186A JP16029977A JP16029977A JPS5492186A JP S5492186 A JPS5492186 A JP S5492186A JP 16029977 A JP16029977 A JP 16029977A JP 16029977 A JP16029977 A JP 16029977A JP S5492186 A JPS5492186 A JP S5492186A
Authority
JP
Japan
Prior art keywords
thickness
charge transfer
layer
sos
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16029977A
Other languages
Japanese (ja)
Other versions
JPS6028399B2 (en
Inventor
Yoshiiku Togei
Nobuo Sasaki
Yoshihiko Higa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP52160299A priority Critical patent/JPS6028399B2/en
Publication of JPS5492186A publication Critical patent/JPS5492186A/en
Publication of JPS6028399B2 publication Critical patent/JPS6028399B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To give directivity to the charge transfer of a charge transfer device of SOS-MOS structure by controlling the threshold level by varying selectively the thickness of a Si epitaxial layer. CONSTITUTION:As the Si eiptaxial layer of the SOS-MOS structure becomes thinner, its threshold voltage Vth increases gradually. Oxidized film 13 is provided uniformly to the surface of Si epitaxial layer 12 on sapphire 11 and Al electrode 14 is fitted. Layers 12 of alternate (t1) and (t2) in thickness are arrayed and an electrode is provided to each pair in the same direction. Odd-numbered and even- numbered groups of electrodes are connected to terminals phi1 and phi2 respectively and driven by being applied with two-phase CP, so that charges will be transferred to the right in sequence through the turning ON-OFF of the CP voltage. In this way, the thickness of the growth layer is controlled selectively to make it possible to transfer charges with simple constitution.
JP52160299A 1977-12-29 1977-12-29 charge transfer device Expired JPS6028399B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52160299A JPS6028399B2 (en) 1977-12-29 1977-12-29 charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52160299A JPS6028399B2 (en) 1977-12-29 1977-12-29 charge transfer device

Publications (2)

Publication Number Publication Date
JPS5492186A true JPS5492186A (en) 1979-07-21
JPS6028399B2 JPS6028399B2 (en) 1985-07-04

Family

ID=15711954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52160299A Expired JPS6028399B2 (en) 1977-12-29 1977-12-29 charge transfer device

Country Status (1)

Country Link
JP (1) JPS6028399B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0327280Y2 (en) * 1985-05-30 1991-06-12
JPH01164766A (en) * 1987-12-18 1989-06-28 Inax Corp Method for calcining accessary tile

Also Published As

Publication number Publication date
JPS6028399B2 (en) 1985-07-04

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