JPS52130581A - Charge transfer device - Google Patents
Charge transfer deviceInfo
- Publication number
- JPS52130581A JPS52130581A JP4754976A JP4754976A JPS52130581A JP S52130581 A JPS52130581 A JP S52130581A JP 4754976 A JP4754976 A JP 4754976A JP 4754976 A JP4754976 A JP 4754976A JP S52130581 A JPS52130581 A JP S52130581A
- Authority
- JP
- Japan
- Prior art keywords
- transfer device
- charge transfer
- channels
- channel stops
- fiexed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To simplify the shape of the device by employing such structure wherein two lines of channel stops of the form being periodically fiexed are provided on a semiconductor substrate and a pair or transfer electrodes having the side edge portions flexed in synchronization with the channels are provided over the channels between said channel stops.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4754976A JPS52130581A (en) | 1976-04-26 | 1976-04-26 | Charge transfer device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4754976A JPS52130581A (en) | 1976-04-26 | 1976-04-26 | Charge transfer device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52130581A true JPS52130581A (en) | 1977-11-01 |
JPS5724940B2 JPS5724940B2 (en) | 1982-05-26 |
Family
ID=12778224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4754976A Granted JPS52130581A (en) | 1976-04-26 | 1976-04-26 | Charge transfer device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52130581A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103296022A (en) * | 2012-12-21 | 2013-09-11 | 上海中航光电子有限公司 | Switching circuit of display panel and display panel |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0673659U (en) * | 1993-03-12 | 1994-10-18 | 正敏 大畠 | Preventive equipment for bath temperature drop |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50146482U (en) * | 1974-05-20 | 1975-12-04 |
-
1976
- 1976-04-26 JP JP4754976A patent/JPS52130581A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50146482U (en) * | 1974-05-20 | 1975-12-04 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103296022A (en) * | 2012-12-21 | 2013-09-11 | 上海中航光电子有限公司 | Switching circuit of display panel and display panel |
Also Published As
Publication number | Publication date |
---|---|
JPS5724940B2 (en) | 1982-05-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL7704466A (en) | CARRYING PLATE WITH MOVABLE HOLDING DEVICES. | |
JPS5347786A (en) | Production of charge transfer device | |
JPS52130581A (en) | Charge transfer device | |
JPS5370772A (en) | Semiconductor split electrode charge transfer device | |
JPS53125782A (en) | Charge transfer device | |
JPS5275190A (en) | Production of 4-phase drive charge coupling device | |
AU501104B2 (en) | Diffusion transfer integral film units | |
JPS52129393A (en) | Solar battery | |
JPS5330742A (en) | Flat thin battery | |
JPS5387188A (en) | Semiconductor device | |
JPS5374372A (en) | Plasma cvd device | |
JPS538571A (en) | Manufacture of inverted-mesa type semiconductor device | |
CA963792A (en) | Elastic substrate for solar cells | |
JPS5362483A (en) | Charge transfer type semiconductor device | |
JPS527750A (en) | Photoelectric cell | |
JPS5353278A (en) | Facet zero input system for charge transfer device | |
JPS5322752A (en) | Thin-film optical switch matrix un it | |
JPS5360585A (en) | Semiconductor device | |
JPS5289432A (en) | Charge transfer variable delay device | |
JPS527757A (en) | Photoelectric electrode substrate | |
JPS52104072A (en) | High voltage semiconductor device | |
JPS5318951A (en) | Production of semiconductor device | |
JPS52149325A (en) | Semiconductor rectifing device | |
JPS5275189A (en) | Charge transfer device | |
JPS527751A (en) | Photoelectric cell |