JPS5474624A - Solidstate pick up unit - Google Patents

Solidstate pick up unit

Info

Publication number
JPS5474624A
JPS5474624A JP14295877A JP14295877A JPS5474624A JP S5474624 A JPS5474624 A JP S5474624A JP 14295877 A JP14295877 A JP 14295877A JP 14295877 A JP14295877 A JP 14295877A JP S5474624 A JPS5474624 A JP S5474624A
Authority
JP
Japan
Prior art keywords
region
electrode layer
photo
windows
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14295877A
Other languages
Japanese (ja)
Inventor
Tadashi Aoki
Yoshio Okubo
Hiroshi Oishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP14295877A priority Critical patent/JPS5474624A/en
Publication of JPS5474624A publication Critical patent/JPS5474624A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE: To reduce the increase in the dark current produced to the pick up unit, by increasing the spectral sensitivity for short wave length region for ineident light without lowering the amount of charge dealed for the photo gate electrode.
CONSTITUTION: The photo gate electrode layer 1 of the solidstate pick up unit is formed in the silicon substrate, forming the region in high concentration diffusion of the same conduction type. further, the channel stopper region 2 fixing the photo gate electrodes 3n, 3n+1 is formed, the channel stopper regions 13 to 15 for the part present in the photo detection window not covered with the photo shield films 4,5 of the region 2 are removed, and the windows 16 to 18 made on the electrode layer 1 in which all incident lights reach the substrate are formed. Then, the gate oxide films 11, 12 are formed on the upper part of the regions 13 to 15 of the windows 16 to 18, taking the constitution not present for the electrode layer 1, The constitution is made that the high concentration diffusion region passes through the center of the windows 16 to 18 made on the electrode layer 1 of the gate electrodes 3n and 3n+1.
COPYRIGHT: (C)1979,JPO&Japio
JP14295877A 1977-11-28 1977-11-28 Solidstate pick up unit Pending JPS5474624A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14295877A JPS5474624A (en) 1977-11-28 1977-11-28 Solidstate pick up unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14295877A JPS5474624A (en) 1977-11-28 1977-11-28 Solidstate pick up unit

Publications (1)

Publication Number Publication Date
JPS5474624A true JPS5474624A (en) 1979-06-14

Family

ID=15327604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14295877A Pending JPS5474624A (en) 1977-11-28 1977-11-28 Solidstate pick up unit

Country Status (1)

Country Link
JP (1) JPS5474624A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011101014A (en) * 2009-11-05 2011-05-19 Samsung Electronics Co Ltd Photo detecting apparatus and unit pixel thereof
JP2011171715A (en) * 2010-02-17 2011-09-01 Samsung Electronics Co Ltd Sensor system and method of operating the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5232693A (en) * 1975-09-08 1977-03-12 Nec Corp Semiconductor device
JPS5239311A (en) * 1975-09-25 1977-03-26 Sony Corp Solid state pickup device
JPS538016A (en) * 1976-07-09 1978-01-25 Fujitsu Ltd Electric charge transfer unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5232693A (en) * 1975-09-08 1977-03-12 Nec Corp Semiconductor device
JPS5239311A (en) * 1975-09-25 1977-03-26 Sony Corp Solid state pickup device
JPS538016A (en) * 1976-07-09 1978-01-25 Fujitsu Ltd Electric charge transfer unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011101014A (en) * 2009-11-05 2011-05-19 Samsung Electronics Co Ltd Photo detecting apparatus and unit pixel thereof
JP2011171715A (en) * 2010-02-17 2011-09-01 Samsung Electronics Co Ltd Sensor system and method of operating the same

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