JPS5474625A - Solidstate pick up unit - Google Patents

Solidstate pick up unit

Info

Publication number
JPS5474625A
JPS5474625A JP14295977A JP14295977A JPS5474625A JP S5474625 A JPS5474625 A JP S5474625A JP 14295977 A JP14295977 A JP 14295977A JP 14295977 A JP14295977 A JP 14295977A JP S5474625 A JPS5474625 A JP S5474625A
Authority
JP
Japan
Prior art keywords
photo
parts
gate electrode
charge
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14295977A
Other languages
Japanese (ja)
Inventor
Yoshio Okubo
Tadashi Aoki
Hiroshi Oishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP14295977A priority Critical patent/JPS5474625A/en
Publication of JPS5474625A publication Critical patent/JPS5474625A/en
Pending legal-status Critical Current

Links

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE: To increase the spectral sensitivity at visible short wave length region without lowering other performances, by setting the thickness of the photo gate electrode not present in the photo interruption layer thinner than that of the electrode located under the photo interrption layer.
CONSTITUTION: In the solidstate pick up unit providing the element row of photo electric conversion element 4n-2 to 4n+3 formed on the silicon substrate 3, charge transfer part 5 transferring the charge of signal obtained from the photo electric conversion with the element row, shift gate electrode 2 transferring the signal charge to the transfer part 5, the conversion elements 4n-2 to 44n+3 are formed with the photo gate electrode 4 formed on the substrate 3 and the slicon oxide film 10. The parts 4'n-2 to 4'n+3 enclosed with the clannel stopper region 1 for the photo gote electrode 4 forming the conversion elements 44n-2 to 44n+3 with this constitution and with the photo shield layer 7 are set thinner than other parts and the diffusion region under the parts 4'n-1 to 4'n+3 is removed.
COPYRIGHT: (C)1979,JPO&Japio
JP14295977A 1977-11-28 1977-11-28 Solidstate pick up unit Pending JPS5474625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14295977A JPS5474625A (en) 1977-11-28 1977-11-28 Solidstate pick up unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14295977A JPS5474625A (en) 1977-11-28 1977-11-28 Solidstate pick up unit

Publications (1)

Publication Number Publication Date
JPS5474625A true JPS5474625A (en) 1979-06-14

Family

ID=15327626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14295977A Pending JPS5474625A (en) 1977-11-28 1977-11-28 Solidstate pick up unit

Country Status (1)

Country Link
JP (1) JPS5474625A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004508727A (en) * 2000-09-05 2004-03-18 ダルサ、コーポレーション Image sensor and manufacturing method thereof
JP2011101014A (en) * 2009-11-05 2011-05-19 Samsung Electronics Co Ltd Photo detecting apparatus and unit pixel thereof
JP2011171715A (en) * 2010-02-17 2011-09-01 Samsung Electronics Co Ltd Sensor system and method of operating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS538016A (en) * 1976-07-09 1978-01-25 Fujitsu Ltd Electric charge transfer unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS538016A (en) * 1976-07-09 1978-01-25 Fujitsu Ltd Electric charge transfer unit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004508727A (en) * 2000-09-05 2004-03-18 ダルサ、コーポレーション Image sensor and manufacturing method thereof
JP2011101014A (en) * 2009-11-05 2011-05-19 Samsung Electronics Co Ltd Photo detecting apparatus and unit pixel thereof
JP2011171715A (en) * 2010-02-17 2011-09-01 Samsung Electronics Co Ltd Sensor system and method of operating the same

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