JPS5488027A - Pickup device using charge transfer device - Google Patents

Pickup device using charge transfer device

Info

Publication number
JPS5488027A
JPS5488027A JP15570477A JP15570477A JPS5488027A JP S5488027 A JPS5488027 A JP S5488027A JP 15570477 A JP15570477 A JP 15570477A JP 15570477 A JP15570477 A JP 15570477A JP S5488027 A JPS5488027 A JP S5488027A
Authority
JP
Japan
Prior art keywords
electrode group
light
pass
layer
wavelength region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15570477A
Other languages
Japanese (ja)
Inventor
Nozomi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15570477A priority Critical patent/JPS5488027A/en
Publication of JPS5488027A publication Critical patent/JPS5488027A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To lessen the blooming phenomenon or the like by providing the 1st electrode group on the insulating layer to block the pass of the light of the desired wavelength region and also providing the 2nd electrode group between the electrodes of the 1st electrode group to make pass the light of the desired wavelenght region respectively.
CONSTITUTION: Opposite conducting semiconductor layer 9 is provided on single conducting substrate 8, and insulating layer 10 is formed on layer 9. Then 1st electrode group 11-a∼11-d are priveded on layer 10 to block the pass of the light of the desired wavelength region, and then 2nd electrode group 12-a∼12-c are provided between electrodes of the 1st electrode group to make pass the light of the desired wavelength region respectively. And the high-impurity density is secured in the thickness direction for at least the semiconductor layer under the 1st electrode group, thus lessening the blooming phenomenon or the like.
COPYRIGHT: (C)1979,JPO&Japio
JP15570477A 1977-12-26 1977-12-26 Pickup device using charge transfer device Pending JPS5488027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15570477A JPS5488027A (en) 1977-12-26 1977-12-26 Pickup device using charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15570477A JPS5488027A (en) 1977-12-26 1977-12-26 Pickup device using charge transfer device

Publications (1)

Publication Number Publication Date
JPS5488027A true JPS5488027A (en) 1979-07-12

Family

ID=15611684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15570477A Pending JPS5488027A (en) 1977-12-26 1977-12-26 Pickup device using charge transfer device

Country Status (1)

Country Link
JP (1) JPS5488027A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5672586A (en) * 1979-11-19 1981-06-16 Matsushita Electronics Corp Solid-state image pickup device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5672586A (en) * 1979-11-19 1981-06-16 Matsushita Electronics Corp Solid-state image pickup device

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