JPS5672586A - Solid-state image pickup device - Google Patents

Solid-state image pickup device

Info

Publication number
JPS5672586A
JPS5672586A JP15042679A JP15042679A JPS5672586A JP S5672586 A JPS5672586 A JP S5672586A JP 15042679 A JP15042679 A JP 15042679A JP 15042679 A JP15042679 A JP 15042679A JP S5672586 A JPS5672586 A JP S5672586A
Authority
JP
Japan
Prior art keywords
transfer gate
gate electrode
under
electrode
signal charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15042679A
Other languages
Japanese (ja)
Inventor
Sakaki Horii
Takao Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP15042679A priority Critical patent/JPS5672586A/en
Publication of JPS5672586A publication Critical patent/JPS5672586A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H01L27/1485—Frame transfer

Abstract

PURPOSE:To prevent color mixture due to the mixing of longitudinal signal charge by shielding a transfer gate electrode with an aluminum vapor-deposited film. CONSTITUTION:Transfer gate electrode phi1 is shielded with aluminum vapor-deposited film 23 and electrode phi1 is applied with a negative voltage. With light incident via G filter section 16, signal charge 24 is generated under transfer gate electrodes 10, 11 and 12. When charge 24 under electrodes 10 and 11 moves under transfer gate electrode 9, many carriers drawn under electrode 9 disappear by recombining with positive holes 25 and never flow into the potential well under transfer gate electrode 8 of R filter section 17. Consequently, the mixing of signal charge in different color filter sections never occurs. Further, the allowable range of the overlapping between sections of filters and constitution units of the device increases remarkably, so that color mixture due to an overlapping defect is hardly occur.
JP15042679A 1979-11-19 1979-11-19 Solid-state image pickup device Pending JPS5672586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15042679A JPS5672586A (en) 1979-11-19 1979-11-19 Solid-state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15042679A JPS5672586A (en) 1979-11-19 1979-11-19 Solid-state image pickup device

Publications (1)

Publication Number Publication Date
JPS5672586A true JPS5672586A (en) 1981-06-16

Family

ID=15496665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15042679A Pending JPS5672586A (en) 1979-11-19 1979-11-19 Solid-state image pickup device

Country Status (1)

Country Link
JP (1) JPS5672586A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195864A (en) * 1983-04-20 1984-11-07 Sanyo Electric Co Ltd Color image pickup device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5195722A (en) * 1975-01-13 1976-08-21
JPS5488027A (en) * 1977-12-26 1979-07-12 Toshiba Corp Pickup device using charge transfer device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5195722A (en) * 1975-01-13 1976-08-21
JPS5488027A (en) * 1977-12-26 1979-07-12 Toshiba Corp Pickup device using charge transfer device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195864A (en) * 1983-04-20 1984-11-07 Sanyo Electric Co Ltd Color image pickup device

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