JPS5451359A - Correcting circuit for fet characteristics - Google Patents

Correcting circuit for fet characteristics

Info

Publication number
JPS5451359A
JPS5451359A JP11660277A JP11660277A JPS5451359A JP S5451359 A JPS5451359 A JP S5451359A JP 11660277 A JP11660277 A JP 11660277A JP 11660277 A JP11660277 A JP 11660277A JP S5451359 A JPS5451359 A JP S5451359A
Authority
JP
Japan
Prior art keywords
electrode
resistance
gate electrode
correcting circuit
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11660277A
Other languages
English (en)
Inventor
Shigeru Tomidokoro
Tsutomu Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11660277A priority Critical patent/JPS5451359A/ja
Publication of JPS5451359A publication Critical patent/JPS5451359A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's
JP11660277A 1977-09-30 1977-09-30 Correcting circuit for fet characteristics Pending JPS5451359A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11660277A JPS5451359A (en) 1977-09-30 1977-09-30 Correcting circuit for fet characteristics

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11660277A JPS5451359A (en) 1977-09-30 1977-09-30 Correcting circuit for fet characteristics

Publications (1)

Publication Number Publication Date
JPS5451359A true JPS5451359A (en) 1979-04-23

Family

ID=14691211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11660277A Pending JPS5451359A (en) 1977-09-30 1977-09-30 Correcting circuit for fet characteristics

Country Status (1)

Country Link
JP (1) JPS5451359A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61156311U (ja) * 1985-03-20 1986-09-27
US6556848B2 (en) 1998-04-27 2003-04-29 Nec Corporation Power amplifier
WO2008111187A1 (ja) * 2007-03-14 2008-09-18 Neuro Solution Corp. 発振器および半導体装置
WO2008126160A1 (ja) * 2007-03-05 2008-10-23 Neuro Solution Corp. 発振器および半導体装置
JP4714299B1 (ja) * 2010-10-14 2011-06-29 彰 福島 音響用擬似三極管特性増幅装置および音響用擬似三極管特性プッシュプル増幅装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61156311U (ja) * 1985-03-20 1986-09-27
US6556848B2 (en) 1998-04-27 2003-04-29 Nec Corporation Power amplifier
WO2008126160A1 (ja) * 2007-03-05 2008-10-23 Neuro Solution Corp. 発振器および半導体装置
WO2008111187A1 (ja) * 2007-03-14 2008-09-18 Neuro Solution Corp. 発振器および半導体装置
JP4714299B1 (ja) * 2010-10-14 2011-06-29 彰 福島 音響用擬似三極管特性増幅装置および音響用擬似三極管特性プッシュプル増幅装置
JP2012085209A (ja) * 2010-10-14 2012-04-26 Akira Fukushima 音響用擬似三極管特性増幅装置および音響用擬似三極管特性プッシュプル増幅装置
CN102457235A (zh) * 2010-10-14 2012-05-16 福岛彰 声音伪三极管特性放大设备和声音伪三极管特性推挽式放大设备
US8502605B2 (en) 2010-10-14 2013-08-06 Akira Fukushima Acoustic pseudo-triode characteristic amplification device and acoustic pseudo-triode characteristic push-pull amplification device
CN102457235B (zh) * 2010-10-14 2016-05-25 福岛彰 声音伪三极管特性放大设备和声音伪三极管特性推挽式放大设备

Similar Documents

Publication Publication Date Title
JPS6425220A (en) Reference voltage generation circuit
JPS5451359A (en) Correcting circuit for fet characteristics
JPS57160148A (en) Microwave integrated circuit device
JPS53103371A (en) Field effect transistor complementary circuit
JPS53140906A (en) Direct current supplying circuit
JPS5469947A (en) Hysteresis circuit
JPS5767319A (en) Amplifier with variable threshold voltage
JPS5541084A (en) Hearing aid
JPS548452A (en) Analog gate circuit
JPS53133359A (en) Switching circuit
JPS56118121A (en) Overvoltage suppressing circuit
JPS54148358A (en) Diode gate circuit
JPS54138356A (en) High impedance input circuit
JPS548951A (en) Differential amplifying circuit
JPS55166952A (en) Bistable circuit
JPS5794984A (en) Semiconductor storage device
JPS5734215A (en) Voltage power circuit
JPS5258450A (en) Transistor output circuit
JPS5273665A (en) Field effect transistor circuit
JPS5579509A (en) Amplifier
JPS5566134A (en) Logic circuit
JPS53105346A (en) Darlington connection circuit of transistors
JPS55107309A (en) Feedback circuit
JPS548941A (en) High threshold value circuit device using field effect transistor
JPS546749A (en) Gain adjusting circuit