JPS54158178A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54158178A
JPS54158178A JP6696578A JP6696578A JPS54158178A JP S54158178 A JPS54158178 A JP S54158178A JP 6696578 A JP6696578 A JP 6696578A JP 6696578 A JP6696578 A JP 6696578A JP S54158178 A JPS54158178 A JP S54158178A
Authority
JP
Japan
Prior art keywords
region
type
igfet
controlled
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6696578A
Other languages
Japanese (ja)
Other versions
JPS628954B2 (en
Inventor
Koji Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6696578A priority Critical patent/JPS54158178A/en
Publication of JPS54158178A publication Critical patent/JPS54158178A/en
Publication of JPS628954B2 publication Critical patent/JPS628954B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To obtain an IGFET featuring excellent characteristics by applying the ion inplantation of a high controlability when the semiconductor region within which the drain region is to be formed is provided within the source region existing under the gate insulator film. CONSTITUTION:N-type layer 12 to be the source region later is fromed by the epitaxial growth on N<+>-type Si substrate 11, and P-type region 13 in which shallow region 13b and deep region 13a is combined is formed there through the ion inplantation. N<+>-type drain region 5 is formed by diffusion within region 13a. Then gate SiO2 film 4 is coated over the entire surface with a thin thickness on region 13b, and the window is drilled on region 5 with electrode 6 coated. In such way, for formation of region 13b, depth d can be controlled in a high precision via the independent control between the energy and the dose of the ion inplantation. As a result, an accurate growth is possible for the depletion layer within region 13b which is controlled by the gate voltage, thus enhancing the electric characteristics of the IGFET.
JP6696578A 1978-06-02 1978-06-02 Semiconductor device Granted JPS54158178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6696578A JPS54158178A (en) 1978-06-02 1978-06-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6696578A JPS54158178A (en) 1978-06-02 1978-06-02 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54158178A true JPS54158178A (en) 1979-12-13
JPS628954B2 JPS628954B2 (en) 1987-02-25

Family

ID=13331235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6696578A Granted JPS54158178A (en) 1978-06-02 1978-06-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54158178A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100472A (en) * 1980-01-16 1981-08-12 Ricoh Co Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100472A (en) * 1980-01-16 1981-08-12 Ricoh Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS628954B2 (en) 1987-02-25

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