JPS54154966A - Semiconductor electron device - Google Patents

Semiconductor electron device

Info

Publication number
JPS54154966A
JPS54154966A JP6341578A JP6341578A JPS54154966A JP S54154966 A JPS54154966 A JP S54154966A JP 6341578 A JP6341578 A JP 6341578A JP 6341578 A JP6341578 A JP 6341578A JP S54154966 A JPS54154966 A JP S54154966A
Authority
JP
Japan
Prior art keywords
layer
etching
film
sio
laminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6341578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6228587B2 (enrdf_load_stackoverflow
Inventor
Hisakazu Mukai
Tetsushi Sakai
Yasusuke Yamamoto
Yoshiharu Kobayashi
Hiroki Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6341578A priority Critical patent/JPS54154966A/ja
Publication of JPS54154966A publication Critical patent/JPS54154966A/ja
Publication of JPS6228587B2 publication Critical patent/JPS6228587B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP6341578A 1978-05-29 1978-05-29 Semiconductor electron device Granted JPS54154966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6341578A JPS54154966A (en) 1978-05-29 1978-05-29 Semiconductor electron device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6341578A JPS54154966A (en) 1978-05-29 1978-05-29 Semiconductor electron device

Publications (2)

Publication Number Publication Date
JPS54154966A true JPS54154966A (en) 1979-12-06
JPS6228587B2 JPS6228587B2 (enrdf_load_stackoverflow) 1987-06-22

Family

ID=13228627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6341578A Granted JPS54154966A (en) 1978-05-29 1978-05-29 Semiconductor electron device

Country Status (1)

Country Link
JP (1) JPS54154966A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211251A (en) * 1981-06-23 1982-12-25 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS59217327A (ja) * 1983-05-26 1984-12-07 Toshiba Corp 半導体装置の製造方法
JPS62150747A (ja) * 1985-12-24 1987-07-04 Rohm Co Ltd 半導体装置
JPS63207154A (ja) * 1987-02-23 1988-08-26 Nec Corp 半導体装置の製造方法
US4980304A (en) * 1990-02-20 1990-12-25 At&T Bell Laboratories Process for fabricating a bipolar transistor with a self-aligned contact

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303071A (en) * 1964-10-27 1967-02-07 Bell Telephone Labor Inc Fabrication of a semiconductive device with closely spaced electrodes
JPS5091288A (enrdf_load_stackoverflow) * 1973-12-12 1975-07-21
JPS5227355A (en) * 1975-08-27 1977-03-01 Hitachi Ltd Diffusion layer formation method
JPS534469A (en) * 1977-05-26 1978-01-17 Toshiba Corp Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303071A (en) * 1964-10-27 1967-02-07 Bell Telephone Labor Inc Fabrication of a semiconductive device with closely spaced electrodes
JPS5091288A (enrdf_load_stackoverflow) * 1973-12-12 1975-07-21
JPS5227355A (en) * 1975-08-27 1977-03-01 Hitachi Ltd Diffusion layer formation method
JPS534469A (en) * 1977-05-26 1978-01-17 Toshiba Corp Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211251A (en) * 1981-06-23 1982-12-25 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS59217327A (ja) * 1983-05-26 1984-12-07 Toshiba Corp 半導体装置の製造方法
JPS62150747A (ja) * 1985-12-24 1987-07-04 Rohm Co Ltd 半導体装置
JPS63207154A (ja) * 1987-02-23 1988-08-26 Nec Corp 半導体装置の製造方法
US4980304A (en) * 1990-02-20 1990-12-25 At&T Bell Laboratories Process for fabricating a bipolar transistor with a self-aligned contact

Also Published As

Publication number Publication date
JPS6228587B2 (enrdf_load_stackoverflow) 1987-06-22

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