JPS5091288A - - Google Patents
Info
- Publication number
- JPS5091288A JPS5091288A JP48137803A JP13780373A JPS5091288A JP S5091288 A JPS5091288 A JP S5091288A JP 48137803 A JP48137803 A JP 48137803A JP 13780373 A JP13780373 A JP 13780373A JP S5091288 A JPS5091288 A JP S5091288A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48137803A JPS5242670B2 (enrdf_load_stackoverflow) | 1973-12-12 | 1973-12-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48137803A JPS5242670B2 (enrdf_load_stackoverflow) | 1973-12-12 | 1973-12-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5091288A true JPS5091288A (enrdf_load_stackoverflow) | 1975-07-21 |
| JPS5242670B2 JPS5242670B2 (enrdf_load_stackoverflow) | 1977-10-26 |
Family
ID=15207202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48137803A Expired JPS5242670B2 (enrdf_load_stackoverflow) | 1973-12-12 | 1973-12-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5242670B2 (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5466076A (en) * | 1977-10-25 | 1979-05-28 | Ibm | Semiconductor bipolar device |
| JPS54154966A (en) * | 1978-05-29 | 1979-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor electron device |
| JPS54154967A (en) * | 1978-05-29 | 1979-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor electronic device |
| JPS5676563A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
| JPS5676561A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
| JPS5676562A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
| US5668028A (en) * | 1993-11-30 | 1997-09-16 | Sgs-Thomson Microelectronics, Inc. | Method of depositing thin nitride layer on gate oxide dielectric |
-
1973
- 1973-12-12 JP JP48137803A patent/JPS5242670B2/ja not_active Expired
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5466076A (en) * | 1977-10-25 | 1979-05-28 | Ibm | Semiconductor bipolar device |
| JPS54154966A (en) * | 1978-05-29 | 1979-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor electron device |
| JPS54154967A (en) * | 1978-05-29 | 1979-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor electronic device |
| JPS5676563A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
| JPS5676561A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
| JPS5676562A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
| US5668028A (en) * | 1993-11-30 | 1997-09-16 | Sgs-Thomson Microelectronics, Inc. | Method of depositing thin nitride layer on gate oxide dielectric |
| US5710453A (en) * | 1993-11-30 | 1998-01-20 | Sgs-Thomson Microelectronics, Inc. | Transistor structure and method for making same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5242670B2 (enrdf_load_stackoverflow) | 1977-10-26 |