JPS54150335A - Etching method for silicon oxide thin film - Google Patents
Etching method for silicon oxide thin filmInfo
- Publication number
- JPS54150335A JPS54150335A JP5929378A JP5929378A JPS54150335A JP S54150335 A JPS54150335 A JP S54150335A JP 5929378 A JP5929378 A JP 5929378A JP 5929378 A JP5929378 A JP 5929378A JP S54150335 A JPS54150335 A JP S54150335A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- soln
- mask
- film
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Magnetic Heads (AREA)
- ing And Chemical Polishing (AREA)
Abstract
PURPOSE: To prevent etching speed decrease and enhance etching accuracy, in etching of a silicon oxide thin film, by dipping the film in a soln. having a high affinity for the film and an etching mask for a predetermined time followed by drying and dipping in an etching soln.
CONSTITUTION: Silicon oxide thin film 2 of substrate 1 is coated with a photoresist agent, covered with a desired optical mask, and dipped in a developing soln. to form etching mask 3. Film 2 and mask 3 are then dipped in methyl alcohol having a high affinity for them for a time determined in accordance with angle θ between them, and they are dried to remove the alcohol. The close contact between film 2 and mask 3 is loosened, and an etching soln. is allowed to penetrate into the interface to carry out etching by a known method. Etching speed decrease, etching soln. deterioration, etc. due to mixt. of methyl alcohol into the etching soln. are prevented, and etching accuracy is enhanced.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5929378A JPS54150335A (en) | 1978-05-18 | 1978-05-18 | Etching method for silicon oxide thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5929378A JPS54150335A (en) | 1978-05-18 | 1978-05-18 | Etching method for silicon oxide thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54150335A true JPS54150335A (en) | 1979-11-26 |
Family
ID=13109181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5929378A Pending JPS54150335A (en) | 1978-05-18 | 1978-05-18 | Etching method for silicon oxide thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54150335A (en) |
-
1978
- 1978-05-18 JP JP5929378A patent/JPS54150335A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56122130A (en) | Method for forming pattern of thin film transistor | |
JPS5569265A (en) | Pattern-forming method | |
JPS54150335A (en) | Etching method for silicon oxide thin film | |
JPS556844A (en) | Method of formating wiring pattern | |
JPS5494881A (en) | Exposure method | |
JPS55157234A (en) | Manufacture of semiconductor device | |
JPS57183030A (en) | Manufacture of semiconductor device | |
JPS5533035A (en) | Forming of resist pattern shaped like inverted truncated pyramid | |
JPS52127173A (en) | Pattern formation method | |
JPS5318965A (en) | Resist coating method | |
JPS54112744A (en) | Selectively etching method for insulating layer | |
JPS55151338A (en) | Fabricating method of semiconductor device | |
JPS54124975A (en) | Manufacture of semiconductor element | |
JPS5617348A (en) | Exposing method | |
JPS6459815A (en) | Formation of pattern | |
JPS57118641A (en) | Lifting-off method | |
JPS5558374A (en) | Etching method | |
JPS55161068A (en) | Etching method of semiconductor substrate | |
JPS5760836A (en) | Manufacture of semiconductor device | |
JPS5538085A (en) | Production of semiconductor device | |
JPS5286073A (en) | Selective etching | |
JPS52117560A (en) | Mask formation method | |
JPS52117550A (en) | Electrode formation method | |
JPS57180127A (en) | Formation of resist pattern | |
JPS5353964A (en) | Electrode forming method of semiconductor device |