JPS54150335A - Etching method for silicon oxide thin film - Google Patents

Etching method for silicon oxide thin film

Info

Publication number
JPS54150335A
JPS54150335A JP5929378A JP5929378A JPS54150335A JP S54150335 A JPS54150335 A JP S54150335A JP 5929378 A JP5929378 A JP 5929378A JP 5929378 A JP5929378 A JP 5929378A JP S54150335 A JPS54150335 A JP S54150335A
Authority
JP
Japan
Prior art keywords
etching
soln
mask
film
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5929378A
Other languages
Japanese (ja)
Inventor
Yoshio Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5929378A priority Critical patent/JPS54150335A/en
Publication of JPS54150335A publication Critical patent/JPS54150335A/en
Pending legal-status Critical Current

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  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To prevent etching speed decrease and enhance etching accuracy, in etching of a silicon oxide thin film, by dipping the film in a soln. having a high affinity for the film and an etching mask for a predetermined time followed by drying and dipping in an etching soln.
CONSTITUTION: Silicon oxide thin film 2 of substrate 1 is coated with a photoresist agent, covered with a desired optical mask, and dipped in a developing soln. to form etching mask 3. Film 2 and mask 3 are then dipped in methyl alcohol having a high affinity for them for a time determined in accordance with angle θ between them, and they are dried to remove the alcohol. The close contact between film 2 and mask 3 is loosened, and an etching soln. is allowed to penetrate into the interface to carry out etching by a known method. Etching speed decrease, etching soln. deterioration, etc. due to mixt. of methyl alcohol into the etching soln. are prevented, and etching accuracy is enhanced.
COPYRIGHT: (C)1979,JPO&Japio
JP5929378A 1978-05-18 1978-05-18 Etching method for silicon oxide thin film Pending JPS54150335A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5929378A JPS54150335A (en) 1978-05-18 1978-05-18 Etching method for silicon oxide thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5929378A JPS54150335A (en) 1978-05-18 1978-05-18 Etching method for silicon oxide thin film

Publications (1)

Publication Number Publication Date
JPS54150335A true JPS54150335A (en) 1979-11-26

Family

ID=13109181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5929378A Pending JPS54150335A (en) 1978-05-18 1978-05-18 Etching method for silicon oxide thin film

Country Status (1)

Country Link
JP (1) JPS54150335A (en)

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