JPS54149465A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS54149465A JPS54149465A JP5843478A JP5843478A JPS54149465A JP S54149465 A JPS54149465 A JP S54149465A JP 5843478 A JP5843478 A JP 5843478A JP 5843478 A JP5843478 A JP 5843478A JP S54149465 A JPS54149465 A JP S54149465A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- crystal
- poly
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5843478A JPS54149465A (en) | 1978-05-16 | 1978-05-16 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5843478A JPS54149465A (en) | 1978-05-16 | 1978-05-16 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54149465A true JPS54149465A (en) | 1979-11-22 |
Family
ID=13084276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5843478A Pending JPS54149465A (en) | 1978-05-16 | 1978-05-16 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54149465A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5698873A (en) * | 1980-01-07 | 1981-08-08 | Nec Corp | Integrated circuit |
JPS56161670A (en) * | 1980-05-16 | 1981-12-12 | Hitachi Ltd | Semiconductor device |
JPS56167331A (en) * | 1980-05-28 | 1981-12-23 | Sony Corp | Manufacture of semiconductor device |
US4870033A (en) * | 1985-03-19 | 1989-09-26 | Yamaha Corporation | Method of manufacturing a multilayer electrode containing silicide for a semiconductor device |
US5389564A (en) * | 1992-06-22 | 1995-02-14 | Motorola, Inc. | Method of forming a GaAs FET having etched ohmic contacts |
-
1978
- 1978-05-16 JP JP5843478A patent/JPS54149465A/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5698873A (en) * | 1980-01-07 | 1981-08-08 | Nec Corp | Integrated circuit |
JPS56161670A (en) * | 1980-05-16 | 1981-12-12 | Hitachi Ltd | Semiconductor device |
JPS56167331A (en) * | 1980-05-28 | 1981-12-23 | Sony Corp | Manufacture of semiconductor device |
JPH0249011B2 (ja) * | 1980-05-28 | 1990-10-26 | Sony Corp | |
US4870033A (en) * | 1985-03-19 | 1989-09-26 | Yamaha Corporation | Method of manufacturing a multilayer electrode containing silicide for a semiconductor device |
US5389564A (en) * | 1992-06-22 | 1995-02-14 | Motorola, Inc. | Method of forming a GaAs FET having etched ohmic contacts |
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