JPS54143078A - Field effect switching element - Google Patents

Field effect switching element

Info

Publication number
JPS54143078A
JPS54143078A JP5127578A JP5127578A JPS54143078A JP S54143078 A JPS54143078 A JP S54143078A JP 5127578 A JP5127578 A JP 5127578A JP 5127578 A JP5127578 A JP 5127578A JP S54143078 A JPS54143078 A JP S54143078A
Authority
JP
Japan
Prior art keywords
base
gate
dielectric strength
electrode
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5127578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6145865B2 (https=
Inventor
Susumu Murakami
Yoshio Terasawa
Kenji Miyata
Saburo Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5127578A priority Critical patent/JPS54143078A/ja
Publication of JPS54143078A publication Critical patent/JPS54143078A/ja
Publication of JPS6145865B2 publication Critical patent/JPS6145865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes

Landscapes

  • Thyristors (AREA)
JP5127578A 1978-04-28 1978-04-28 Field effect switching element Granted JPS54143078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5127578A JPS54143078A (en) 1978-04-28 1978-04-28 Field effect switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5127578A JPS54143078A (en) 1978-04-28 1978-04-28 Field effect switching element

Publications (2)

Publication Number Publication Date
JPS54143078A true JPS54143078A (en) 1979-11-07
JPS6145865B2 JPS6145865B2 (https=) 1986-10-09

Family

ID=12882386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5127578A Granted JPS54143078A (en) 1978-04-28 1978-04-28 Field effect switching element

Country Status (1)

Country Link
JP (1) JPS54143078A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0191474A (ja) * 1987-10-02 1989-04-11 Toyota Autom Loom Works Ltd 半導体スイッチング素子
US4943840A (en) * 1985-11-29 1990-07-24 Bbc Brown, Boveri & Company, Limited Reverse-conducting thyristor
CN115629233A (zh) * 2022-10-17 2023-01-20 国网安徽省电力有限公司电力科学研究院 一种适用于特高压换流变合闸换相失败判定方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943840A (en) * 1985-11-29 1990-07-24 Bbc Brown, Boveri & Company, Limited Reverse-conducting thyristor
JPH0191474A (ja) * 1987-10-02 1989-04-11 Toyota Autom Loom Works Ltd 半導体スイッチング素子
CN115629233A (zh) * 2022-10-17 2023-01-20 国网安徽省电力有限公司电力科学研究院 一种适用于特高压换流变合闸换相失败判定方法
CN115629233B (zh) * 2022-10-17 2023-06-27 国网安徽省电力有限公司电力科学研究院 一种适用于特高压换流变合闸换相失败判定方法

Also Published As

Publication number Publication date
JPS6145865B2 (https=) 1986-10-09

Similar Documents

Publication Publication Date Title
US4502070A (en) FET Controlled thyristor
GB1480402A (en) Filament-type semiconductor switch device
JPS577165A (en) Semiconductor device
GB1323338A (en) Semiconductor switches
JPS54143078A (en) Field effect switching element
US4491742A (en) Semiconductor switch device
US5293054A (en) Emitter switched thyristor without parasitic thyristor latch-up susceptibility
JPS5546543A (en) Turned-off thyristor
SE7910463L (sv) Styrelektrodreglerad halvledaranordning
JPS57138175A (en) Controlled rectifier for semiconductor
GB1093469A (en) Improvements in voltage comparator
JPS5771178A (en) Semiconductor device
EP0301761A3 (en) Thyristors
IE792474L (en) Switching device
US4011579A (en) Semiconductor gate turn-off device
Temple Directly light-fired thyristors with high di/dt capability
JPS5637676A (en) Field effect type semiconductor switching device
JPS57176781A (en) Superconductive device
JPS5712570A (en) Semiconductor photoelectric converter
JPS5655068A (en) Thyristor
JPH0128541B2 (https=)
JPS57147272A (en) Semiconductor element
JPS649659A (en) Semiconductor element
JPS6411367A (en) Gate turn-off thyristor
JPS5646337A (en) Semiconductor switch