JPS6145865B2 - - Google Patents

Info

Publication number
JPS6145865B2
JPS6145865B2 JP53051275A JP5127578A JPS6145865B2 JP S6145865 B2 JPS6145865 B2 JP S6145865B2 JP 53051275 A JP53051275 A JP 53051275A JP 5127578 A JP5127578 A JP 5127578A JP S6145865 B2 JPS6145865 B2 JP S6145865B2
Authority
JP
Japan
Prior art keywords
conductivity type
layer
main
electrode
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53051275A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54143078A (en
Inventor
Susumu Murakami
Yoshio Terasawa
Kenji Myata
Saburo Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5127578A priority Critical patent/JPS54143078A/ja
Publication of JPS54143078A publication Critical patent/JPS54143078A/ja
Publication of JPS6145865B2 publication Critical patent/JPS6145865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes

Landscapes

  • Thyristors (AREA)
JP5127578A 1978-04-28 1978-04-28 Field effect switching element Granted JPS54143078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5127578A JPS54143078A (en) 1978-04-28 1978-04-28 Field effect switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5127578A JPS54143078A (en) 1978-04-28 1978-04-28 Field effect switching element

Publications (2)

Publication Number Publication Date
JPS54143078A JPS54143078A (en) 1979-11-07
JPS6145865B2 true JPS6145865B2 (https=) 1986-10-09

Family

ID=12882386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5127578A Granted JPS54143078A (en) 1978-04-28 1978-04-28 Field effect switching element

Country Status (1)

Country Link
JP (1) JPS54143078A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3686027D1 (de) * 1985-11-29 1992-08-20 Bbc Brown Boveri & Cie Rueckwaertsleitender thyristor.
JP2719914B2 (ja) * 1987-10-02 1998-02-25 財団法人 半導体研究振興会 半導体スイッチング素子
CN115629233B (zh) * 2022-10-17 2023-06-27 国网安徽省电力有限公司电力科学研究院 一种适用于特高压换流变合闸换相失败判定方法

Also Published As

Publication number Publication date
JPS54143078A (en) 1979-11-07

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