JPS54142031A - Memory circuit - Google Patents
Memory circuitInfo
- Publication number
- JPS54142031A JPS54142031A JP5085678A JP5085678A JPS54142031A JP S54142031 A JPS54142031 A JP S54142031A JP 5085678 A JP5085678 A JP 5085678A JP 5085678 A JP5085678 A JP 5085678A JP S54142031 A JPS54142031 A JP S54142031A
- Authority
- JP
- Japan
- Prior art keywords
- line
- memory cell
- read
- write selection
- earth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5085678A JPS54142031A (en) | 1978-04-27 | 1978-04-27 | Memory circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5085678A JPS54142031A (en) | 1978-04-27 | 1978-04-27 | Memory circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54142031A true JPS54142031A (en) | 1979-11-05 |
Family
ID=12870356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5085678A Pending JPS54142031A (en) | 1978-04-27 | 1978-04-27 | Memory circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54142031A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61120395A (ja) * | 1984-11-14 | 1986-06-07 | Toshiba Corp | 半導体記憶装置 |
JPS63138593A (ja) * | 1986-11-28 | 1988-06-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
WO2011096264A1 (en) * | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
-
1978
- 1978-04-27 JP JP5085678A patent/JPS54142031A/ja active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61120395A (ja) * | 1984-11-14 | 1986-06-07 | Toshiba Corp | 半導体記憶装置 |
JPS63138593A (ja) * | 1986-11-28 | 1988-06-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH0568797B2 (ja) * | 1986-11-28 | 1993-09-29 | Mitsubishi Electric Corp | |
WO2011096264A1 (en) * | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
JP2011181167A (ja) * | 2010-02-05 | 2011-09-15 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の駆動方法 |
KR20120124471A (ko) * | 2010-02-05 | 2012-11-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 구동 방법 |
JP2015135719A (ja) * | 2010-02-05 | 2015-07-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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