ATE70921T1 - Direktzugriffsspeicher. - Google Patents

Direktzugriffsspeicher.

Info

Publication number
ATE70921T1
ATE70921T1 AT85106934T AT85106934T ATE70921T1 AT E70921 T1 ATE70921 T1 AT E70921T1 AT 85106934 T AT85106934 T AT 85106934T AT 85106934 T AT85106934 T AT 85106934T AT E70921 T1 ATE70921 T1 AT E70921T1
Authority
AT
Austria
Prior art keywords
direct access
access storage
directed
disclosure
transistor switch
Prior art date
Application number
AT85106934T
Other languages
English (en)
Inventor
Yuen Hung Chan
Frank Duane Jones
William Francis Stinson
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE70921T1 publication Critical patent/ATE70921T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits
AT85106934T 1984-06-25 1985-06-05 Direktzugriffsspeicher. ATE70921T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/624,488 US4596002A (en) 1984-06-25 1984-06-25 Random access memory RAM employing complementary transistor switch (CTS) memory cells
EP85106934A EP0169355B1 (de) 1984-06-25 1985-06-05 Direktzugriffsspeicher

Publications (1)

Publication Number Publication Date
ATE70921T1 true ATE70921T1 (de) 1992-01-15

Family

ID=24502197

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85106934T ATE70921T1 (de) 1984-06-25 1985-06-05 Direktzugriffsspeicher.

Country Status (5)

Country Link
US (1) US4596002A (de)
EP (1) EP0169355B1 (de)
JP (1) JPS618794A (de)
AT (1) ATE70921T1 (de)
DE (1) DE3584997D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4636990A (en) * 1985-05-31 1987-01-13 International Business Machines Corporation Three state select circuit for use in a data processing system or the like
US4752913A (en) * 1986-04-30 1988-06-21 International Business Machines Corporation Random access memory employing complementary transistor switch (CTS) memory cells
US4755969A (en) * 1986-11-07 1988-07-05 Digital Electronic Communications Equipment (Dece Corp.) Pseudo random sequence generation
DE69023456T2 (de) * 1989-10-30 1996-06-20 Ibm Bitdekodierungsschema für Speichermatrizen.
US5022010A (en) * 1989-10-30 1991-06-04 International Business Machines Corporation Word decoder for a memory array
US5251173A (en) * 1991-02-06 1993-10-05 International Business Machines Corporation High-speed, low DC power, PNP-loaded word line decorder/driver circuit
JP4467894B2 (ja) 2003-02-10 2010-05-26 シチズンホールディングス株式会社 印字ヘッド
JP5526496B2 (ja) * 2008-06-02 2014-06-18 サンケン電気株式会社 電界効果半導体装置及びその製造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell
US3525084A (en) * 1967-12-14 1970-08-18 Ibm Memory sense system with fast recovery
US3582911A (en) * 1968-12-04 1971-06-01 Ferroxcube Corp Core memory selection matrix
US3753008A (en) * 1970-06-20 1973-08-14 Honeywell Inf Systems Memory pre-driver circuit
US3623033A (en) * 1970-06-29 1971-11-23 Electronic Memories & Magnetic Cross-coupled bridge core memory addressing system
US3636377A (en) * 1970-07-21 1972-01-18 Semi Conductor Electronic Memo Bipolar semiconductor random access memory
US3736574A (en) * 1971-12-30 1973-05-29 Ibm Pseudo-hierarchy memory system
US3786442A (en) * 1972-02-24 1974-01-15 Cogar Corp Rapid recovery circuit for capacitively loaded bit lines
US3789243A (en) * 1972-07-05 1974-01-29 Ibm Monolithic memory sense amplifier/bit driver having active bit/sense line pull-up
US3771147A (en) * 1972-12-04 1973-11-06 Bell Telephone Labor Inc Igfet memory system
US3843954A (en) * 1972-12-29 1974-10-22 Ibm High-voltage integrated driver circuit and memory embodying same
US3863291A (en) * 1973-11-26 1975-02-04 Jacobsen Mfg Co Convertible rotary lawn mower and air blower
US3919566A (en) * 1973-12-26 1975-11-11 Motorola Inc Sense-write circuit for bipolar integrated circuit ram
US3942160A (en) * 1974-06-03 1976-03-02 Motorola, Inc. Bit sense line speed-up circuit for MOS RAM
FR2304991A1 (fr) * 1975-03-15 1976-10-15 Ibm Agencement de circuits pour memoire semi-conductrice et son procede de fonctionnement
US4007451A (en) * 1975-05-30 1977-02-08 International Business Machines Corporation Method and circuit arrangement for operating a highly integrated monolithic information store
US4078261A (en) * 1976-01-02 1978-03-07 Motorola, Inc. Sense/write circuits for bipolar random access memory
US4090254A (en) * 1976-03-01 1978-05-16 International Business Machines Corporation Charge injector transistor memory
US4042915A (en) * 1976-04-15 1977-08-16 National Semiconductor Corporation MOS dynamic random access memory having an improved address decoder circuit
US4104735A (en) * 1976-09-15 1978-08-01 Siemens Aktiengesellschaft Arrangement for addressing a MOS store
US4174541A (en) * 1976-12-01 1979-11-13 Raytheon Company Bipolar monolithic integrated circuit memory with standby power enable
US4194130A (en) * 1977-11-21 1980-03-18 Motorola, Inc. Digital predecoding system
US4242605A (en) * 1978-05-22 1980-12-30 Motorola, Inc. Transient array drive for bipolar ROM/PROM
US4172291A (en) * 1978-08-07 1979-10-23 Fairchild Camera And Instrument Corp. Preset circuit for information storage devices
US4264828A (en) * 1978-11-27 1981-04-28 Intel Corporation MOS Static decoding circuit
DE2926050C2 (de) * 1979-06-28 1981-10-01 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Lesen Und/oder Schreiben eines integrierten Halbleiterspeichers mit Speicherzellen in MTL-Technik
US4308595A (en) * 1979-12-19 1981-12-29 International Business Machines Corporation Array driver
US4287575A (en) * 1979-12-28 1981-09-01 International Business Machines Corporation High speed high density, multi-port random access memory cell
US4323986A (en) * 1980-06-30 1982-04-06 International Business Machines Corporation Electronic storage array having DC stable conductivity modulated storage cells

Also Published As

Publication number Publication date
EP0169355A3 (en) 1989-02-01
US4596002A (en) 1986-06-17
JPH034998B2 (de) 1991-01-24
EP0169355B1 (de) 1991-12-27
DE3584997D1 (de) 1992-02-06
JPS618794A (ja) 1986-01-16
EP0169355A2 (de) 1986-01-29

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties