DE68922424D1 - Ladungsverstärkende Grabenspeicherzelle. - Google Patents

Ladungsverstärkende Grabenspeicherzelle.

Info

Publication number
DE68922424D1
DE68922424D1 DE68922424T DE68922424T DE68922424D1 DE 68922424 D1 DE68922424 D1 DE 68922424D1 DE 68922424 T DE68922424 T DE 68922424T DE 68922424 T DE68922424 T DE 68922424T DE 68922424 D1 DE68922424 D1 DE 68922424D1
Authority
DE
Germany
Prior art keywords
enhancing
charge
storage cell
trench storage
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68922424T
Other languages
English (en)
Other versions
DE68922424T2 (de
Inventor
Donald Mcalpine Kenney
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE68922424D1 publication Critical patent/DE68922424D1/de
Application granted granted Critical
Publication of DE68922424T2 publication Critical patent/DE68922424T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
DE68922424T 1988-03-07 1989-02-06 Ladungsverstärkende Grabenspeicherzelle. Expired - Lifetime DE68922424T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/164,764 US4914740A (en) 1988-03-07 1988-03-07 Charge amplifying trench memory cell

Publications (2)

Publication Number Publication Date
DE68922424D1 true DE68922424D1 (de) 1995-06-08
DE68922424T2 DE68922424T2 (de) 1996-02-01

Family

ID=22595998

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68922424T Expired - Lifetime DE68922424T2 (de) 1988-03-07 1989-02-06 Ladungsverstärkende Grabenspeicherzelle.

Country Status (4)

Country Link
US (1) US4914740A (de)
EP (1) EP0331911B1 (de)
JP (1) JPH0682793B2 (de)
DE (1) DE68922424T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5701022A (en) * 1989-05-22 1997-12-23 Siemens Aktiengesellschaft Semiconductor memory device with trench capacitor
US5283453A (en) * 1992-10-02 1994-02-01 International Business Machines Corporation Trench sidewall structure
US5308783A (en) * 1992-12-16 1994-05-03 Siemens Aktiengesellschaft Process for the manufacture of a high density cell array of gain memory cells
US5729488A (en) * 1994-08-26 1998-03-17 Hughes Electronics Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect
US5627092A (en) * 1994-09-26 1997-05-06 Siemens Aktiengesellschaft Deep trench dram process on SOI for low leakage DRAM cell
US5703387A (en) * 1994-09-30 1997-12-30 United Microelectronics Corp. Split gate memory cell with vertical floating gate
DE19603810C1 (de) * 1996-02-02 1997-08-28 Siemens Ag Speicherzellenanordnung und Verfahren zu deren Herstellung
US5684313A (en) * 1996-02-20 1997-11-04 Kenney; Donald M. Vertical precharge structure for DRAM
JP3512936B2 (ja) * 1996-02-23 2004-03-31 株式会社東芝 半導体記憶装置およびその製造方法
US6369418B1 (en) 1998-03-19 2002-04-09 Lsi Logic Corporation Formation of a novel DRAM cell
US6177699B1 (en) 1998-03-19 2001-01-23 Lsi Logic Corporation DRAM cell having a verticle transistor and a capacitor formed on the sidewalls of a trench isolation
US6090661A (en) 1998-03-19 2000-07-18 Lsi Logic Corporation Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls
KR100268878B1 (ko) * 1998-05-08 2000-10-16 김영환 반도체소자 및 그의 제조방법
GR20000100178A (el) * 2000-05-26 2002-01-31 I.S.D. Μια νεα δομη κυψελης μνημης με τροπο αναγνωσης μεσω ανιχνευσης ρευματος
JP2003179157A (ja) * 2001-12-10 2003-06-27 Nec Corp Ｍｏｓ型半導体装置
TWI231960B (en) * 2004-05-31 2005-05-01 Mosel Vitelic Inc Method of forming films in the trench
US7642588B2 (en) * 2005-10-26 2010-01-05 International Business Machines Corporation Memory cells with planar FETs and vertical FETs with a region only in upper region of a trench and methods of making and using same
KR102026718B1 (ko) * 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법
US8557657B1 (en) 2012-05-18 2013-10-15 International Business Machines Corporation Retrograde substrate for deep trench capacitors
US9424890B2 (en) * 2014-12-01 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385729A (en) * 1964-10-26 1968-05-28 North American Rockwell Composite dual dielectric for isolation in integrated circuits and method of making
US3513365A (en) * 1968-06-24 1970-05-19 Mark W Levi Field-effect integrated circuit and method of fabrication
US3582909A (en) * 1969-03-07 1971-06-01 North American Rockwell Ratioless memory circuit using conditionally switched capacitor
US3614749A (en) * 1969-06-02 1971-10-19 Burroughs Corp Information storage device
US3701980A (en) * 1970-08-03 1972-10-31 Gen Electric High density four-transistor mos content addressed memory
US3699539A (en) * 1970-12-16 1972-10-17 North American Rockwell Bootstrapped inverter memory cell
US3691537A (en) * 1971-05-26 1972-09-12 Gen Electric High speed signal in mos circuits by voltage variable capacitor
US3699544A (en) * 1971-05-26 1972-10-17 Gen Electric Three transistor memory cell
US3706891A (en) * 1971-06-17 1972-12-19 Ibm A. c. stable storage cell
US3878404A (en) * 1972-10-30 1975-04-15 Electronic Arrays Integrated circuit of the MOS variety
US3882472A (en) * 1974-05-30 1975-05-06 Gen Instrument Corp Data flow control in memory having two device memory cells
JPS5154789A (de) * 1974-11-09 1976-05-14 Nippon Electric Co
US4021788A (en) * 1975-05-16 1977-05-03 Burroughs Corporation Capacitor memory cell
US4467450A (en) * 1976-09-13 1984-08-21 Texas Instruments Incorporated Random access MOS memory cell using double level polysilicon
US4168536A (en) * 1977-06-30 1979-09-18 International Business Machines Corporation Capacitor memory with an amplified cell signal
US4462040A (en) * 1979-05-07 1984-07-24 International Business Machines Corporation Single electrode U-MOSFET random access memory
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
US4547793A (en) * 1983-12-27 1985-10-15 International Business Machines Corporation Trench-defined semiconductor structure
US4561172A (en) * 1984-06-15 1985-12-31 Texas Instruments Incorporated Integrated circuit fabrication method utilizing selective etching and oxidation to form isolation regions
US4549927A (en) * 1984-06-29 1985-10-29 International Business Machines Corporation Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices
JPS6187358A (ja) * 1984-10-05 1986-05-02 Nec Corp 半導体記憶装置およびその製造方法
DE3765844D1 (de) * 1986-06-10 1990-12-06 Siemens Ag Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen.
US4763181A (en) * 1986-12-08 1988-08-09 Motorola, Inc. High density non-charge-sensing DRAM cell

Also Published As

Publication number Publication date
EP0331911B1 (de) 1995-05-03
US4914740A (en) 1990-04-03
JPH0682793B2 (ja) 1994-10-19
EP0331911A2 (de) 1989-09-13
JPH029165A (ja) 1990-01-12
EP0331911A3 (de) 1991-06-05
DE68922424T2 (de) 1996-02-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8330 Complete renunciation